STD20NF06L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STD20NF06L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 18 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: DPAK

Búsqueda de reemplazo de MOSFET STD20NF06L

STD20NF06L Datasheet (PDF)

..1. Size:414K st
std20nf06lt4 std20nf06l std20nf06l-1.pdf

STD20NF06LSTD20NF06L-1N-channel 60V - 0.032 - 24A - DPAK - IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06L 60V

..2. Size:410K st
std20nf06l std20nf06l-1.pdf

STD20NF06LSTD20NF06L-1N-channel 60V - 0.032 - 24A - DPAK - IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06L 60V

..3. Size:1181K umw-ic
std20nf06l.pdf

R STD20NF06LUMW60V N-Channel Enhancement Mode Power MOSFETUMW STD20NF06LGeneral DescriptionThe STD20NF06L uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.FeaturesVDS = 60V,ID =30ARDS(ON),25m(Typ) @ VGS =10VRDS(ON),30m(Typ) @ VGS =4.5VAdvanced Trench TechnologyExcellent RD

..4. Size:286K inchange semiconductor
std20nf06l.pdf

isc N-Channel MOSFET Transistor STD20NF06LFEATURESDrain Current : I = 24A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

5.1. Size:342K st
std20nf06t4.pdf

STD20NF06N-channel 60V - 0.032 - 24A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06 60V

5.2. Size:345K st
std20nf06.pdf

STD20NF06N-channel 60V - 0.032 - 24A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD20NF06 60V

7.1. Size:328K st
std20nf10t4.pdf

STD20NF10N-channel 100V - 0.038 - 100A - DPAKLow gate charge STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTD20NF10 100V

7.2. Size:909K st
std20nf20 stf20nf20 stp20nf20.pdf

STD20NF20STF20NF20, STP20NF20N-channel 200 V, 0.10 , 18 A DPAK, TO-220, TO-220FPlow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PWSTD20NF20 200 V

7.3. Size:331K st
std20nf10.pdf

STD20NF10N-channel 100V - 0.038 - 100A - DPAKLow gate charge STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTD20NF10 100V

7.4. Size:286K inchange semiconductor
std20nf20.pdf

isc N-Channel MOSFET Transistor STD20NF20FEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 125m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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