STD44N4LF6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STD44N4LF6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 44 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 65 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm
   Paquete / Cubierta: DPAK

Búsqueda de reemplazo de MOSFET STD44N4LF6

STD44N4LF6 Datasheet (PDF)

..1. Size:908K st
std44n4lf6.pdf

STD44N4LF6N-channel 40 V, 8.9 m, 44 A DPAKSTripFET VI DeepGATE Power MOSFETFeaturesOrder code VDSS RDS(on) max IDSTD44N4LF6 40 V 12.5 m 44 A 100% avalanche tested3 Logic level drive1ApplicationDPAK Switching applications AutomotiveDescriptionFigure 1. Internal schematic diagramThis product utilizes the 6th generation of design rules of ST

9.1. Size:134K 1
stu448s std448s.pdf

GreenProductSTU/D448SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.26 @ VGS=10VTO-252 and TO-251 Package.40V 30A66 @ VGS=4.5V GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I -

9.2. Size:123K samhop
stu449s std449s.pdf

GreenProductSTU/D449SaS mHop Microelectronics C orp.Ver 1.0P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.41 @ VGS=-10VTO-252 and TO-251 Package.-40V -24A74 @ VGS=-4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO -

9.3. Size:122K samhop
stu441s std441s.pdf

GreenProductSTU/D441SaS mHop Microelectronics C orp.Ver 1.0P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.35 @ VGS=10VSuface Mount Package.-40V -27A61 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I -

9.4. Size:122K samhop
stu442s std442s.pdf

GreenProductSTU/D442SaS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.27 @ VGS=10VTO-252 and TO-251 Package.25A40V48 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 25

9.5. Size:149K samhop
stu446s std446s.pdf

GreenProductSTU/D446SaS mHop Microelectronics C orp.Ver 2.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.16.5 @ VGS=10VTO-252 and TO-251 Package.38A40V28 @ VGS=4.5V Pb Free and Halogan Free.GSSTU SERIESSTD SERIES( )TO - 2

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