APT10050LVR Todos los transistores

 ..1. Size:60K  apt
 apt10050lvr.pdf

APT10050LVR 1000V 21A 0.500 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

 4.1. Size:67K  apt
 apt10050b2vfrg apt10050lvfrg.pdf

APT10050B2VFR APT10050LVFR 1000V 21A 0.500 B2VFR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR

 6.1. Size:60K  apt
 apt10050jn.pdf

D G APT10050JN 1000V 20.5A 0.50 S ISOTOP "UL Recognized" File No. E145592 (S) POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT Symbol Parameter 10050JN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 20.5 Amps IDM, lLM

 6.2. Size:107K  apt
 apt10050b2vfr.pdf

APT10050B2VFR APT10050LVFR 1000V 21A 0.500W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specifica

 6.3. Size:39K  apt
 apt10050jlc.pdf

APT10050JLC 1000V 19A 0.500 TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast s

 6.4. Size:68K  apt
 apt10050b2lc.pdf

APT10050B2LC APT10050LLC 1000V 21A 0.500W B2LC TM POWER MOS VI T-MAX Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, LLC delivers exceptionally fa

 6.5. Size:71K  apt
 apt10050jvfr.pdf

 6.6. Size:68K  apt
 apt10050jvr.pdf

APT10050JVR 1000V 19A 0.500 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

 6.7. Size:59K  apt
 apt10050b2vr.pdf

APT10050B2VR 1000V 21A 0.500 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

 6.8. Size:67K  apt
 apt10050b2 lvfr c.pdf

APT10050B2VFR APT10050LVFR 1000V 21A 0.500 B2VFR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR