STD70N2LH5 Todos los transistores

 ..1. Size:230K  st
 std70n2lh5 stu70n2lh5.pdf

STD70N2LH5 STU70N2LH5 N-channel 25 V, 0.006 , 48 A - DPAK - IPAK STripFET V Power MOSFET Preliminary Data Features Type VDSS RDS(on) max ID STD70N2LH5 25 V 0.0071 48 A STU70N2LH5 25 V 0.0075 48 A 3 3 2 RDS(on) * Qg industry benchmark 1 1 Extremely low on-resistance RDS(on) DPAK IPAK Very low switching gate charge High avalanche ruggedness L

 8.1. Size:505K  st
 std70nh02l std70nh02l-1.pdf

STD70NH02L STD70NH02L-1 N-channel 24V - 0.0062 - 60A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD70NH02L-1 24V

 8.2. Size:378K  st
 std70n02l-1 std70n02l.pdf

STD70N02L STD70N02L-1 N-channel 25V - 0.0068 - 60A - DPAK - IPAK STripFET III Power MOSFET Features Type VDSS RDS(on) ID STD70N02L 25V

 8.3. Size:971K  st
 stb70n10f4 std70n10f4 stp70n10f4 stw70n10f4.pdf

STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4 N-channel 100 V, 0.015 , 60 A, STripFET DeepGATE Power MOSFET in TO-220, DPAK, TO-247, D2PAK Features Type VDSS RDS(on) max ID STB70N10F4 100 V

 8.4. Size:351K  st
 std70n03l-1 std70n03l-1 std70n03l.pdf

STD70N03L STD70N03L-1 N-channel 30V - 0.0059 - 70A - DPAK / IPAK STripFET III Power MOSFET General features Type VDSS RDS(on) ID STD70N03L 30V

 8.5. Size:742K  st
 std70ns04zl.pdf

STD70NS04ZL N-channel clamped 9.5 m , 70 A DPAK fully protected SAFeFET Power MOSFET Features RDS(on) Type VDSS ID max STD70NS04ZL Clamped

 8.6. Size:504K  st
 std70nh02lt4.pdf

STD70NH02L STD70NH02L-1 N-channel 24V - 0.0062 - 60A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD70NH02L-1 24V

 8.7. Size:623K  st
 std70n6f3.pdf

STD70N6F3 N-channel 60 V, 8.0 m , 70 A DPAK STripFET III Power MOSFET Preliminary data Features Type VDSS RDS(on) ID Pw STD70N6F3 60 V

 8.8. Size:374K  st
 std70n02l std70n02l-1.pdf

STD70N02L STD70N02L-1 N-channel 25V - 0.0068 - 60A - DPAK - IPAK STripFET III Power MOSFET Features Type VDSS RDS(on) ID STD70N02L 25V

 8.9. Size:884K  cn vbsemi
 std70n6f3.pdf

STD70N6F3 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit