STF13NK50Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STF13NK50ZSTP13NK50Z, STW13NK50ZN-channel 500 V, 0.40 , 11 A TO-220, TO-220FP, TO-247Zener-protected SuperMESHTM Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTF13NK50Z 500 V

STB13NM50N/-1 - STF13NM50NSTP13NM50N - STW13NM50NN-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFETTO-220 - TO-247 - TO-220FP - I2PAK - D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB13NM50N 550 V 0.32 12 ATO-220 IPAKSTB13NM50N-1 550 V 0.32 12 ASTF13NM50N 550 V 0.32 12 A(1) 321STP13NM50N 550 V 0.32 12 ATO-247STW13N

STF13N95K3STP13N95K3, STW13N95K3N-channel 950 V, 0.68 , 10 A TO-220, TO-220FP, TO-247Zener-protected SuperMESH3 Power MOSFETFeaturesOrder codes VDSS RDS(on)max ID PWSTF13N95K3 40 W33221STP13N95K3 950 V

STB13NM50N/-1 - STF13NM50NSTP13NM50N - STW13NM50NN-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFETTO-220 - TO-247 - TO-220FP - I2PAK - D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB13NM50N 550 V 0.32 12 ATO-220 IPAKSTB13NM50N-1 550 V 0.32 12 ASTF13NM50N 550 V 0.32 12 A(1) 321STP13NM50N 550 V 0.32 12 ATO-247STW13N

STF13N60M2, STFI13N60M2N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF13N60M2650 V 0.38 11 ASTFI13N60M232 Extremely low gate charge1123TO-220FP Lower RDS(on) x area vs previous generationI2PAKFP Low gate input r

STF13NM60N-HN-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFETin TO-220FPFeaturesVDSS RDS(on) Type ID(@Tjmax) maxSTF13NM60N-H 650 V

STB13NM60N,STD13NM60N,STF13NM60NSTP13NM60N,STW13NM60NN-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFETin D2PAK, DPAK, TO-220FP, TO-220, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max3322STB13NM60N 650 V

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5N-channel 800 V, 0.37 typ., 12 A SuperMESH 5 PowerMOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeatures TABOrder codes VDS RDS(on) ID PTOT31STB13N80K5 190 W3D2PAK21STF13N80K5 35 WTO-220FP800 V 0.45 12 ATABSTP13N80K5190 WSTW13N80K5 Worldwide best FOM (figur

STD13NM60ND, STF13NM60ND, STP13NM60NDN-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS @ TJmax RDS(on) max ID313STD13NM60ND21DPAKSTF13NM60ND 650 V 0.38 11 ATO-220FPSTP13NM60NDTAB The worldwide best RDS(on)* area among fast recove

STF13N60DM2DatasheetN-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP packageVDS RDS(on) max. IDOrder codesSTF13N60DM2 600 V 0.365 11 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance321 100% avalanche tested Extremely high dv/dt ruggednessTO-220FP Zener-protectedD(2)A

STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3N-channel 950 V, 0.68 typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP, TO-220 and TO-247Datasheet - production dataFeaturesOrder codes VDSS RDS(on)max ID PTOTSTF13N95K340 WSTFI13N95K3950 V

STF13N65M2, STFI13N65M2N-channel 650 V, 0.37 typ., 10 A MDmesh M2 PowerMOSFETs in TO-220FP and IPAKFP packagesDatasheet - production dataFeaturesRDS(on) Order code VDS max IDSTF13N65M2650 V 0.43 10ASTFI13N65M2 Extremely low gate charge321213 Excellent output capacitance (Coss) profileTO-220FP I2PAKFP (TO-281) 100% avalanche tested

STF13NM60N, STI13NM60N, STP13NM60N,STU13NM60N, STW13NM60NN-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFET in TO-220FP, IPAK, TO-220, IPAK, TO-247 packagesDatasheet production dataFeaturesTABVDSS RDS(on) Order codes ID(@Tjmax) max3322 1STF13NM60N 1IPAKTO-220FPSTI13NM60NSTP13NM60N 650 V

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STF13NM60NFEATURESLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage