STF13NK50Z Todos los transistores

 ..1. Size:516K  st
 stf13nk50z stp13nk50z stw13nk50z.pdf

STF13NK50Z STP13NK50Z, STW13NK50Z N-channel 500 V, 0.40 , 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET Features RDS(on) Type VDSS ID Pw max STF13NK50Z 500 V

 8.1. Size:578K  st
 stb13nm50n-1 stb13nm50n stf13nm50n stp13nm50n stw13nm50n.pdf

STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB13NM50N 550 V 0.32 12 A TO-220 I PAK STB13NM50N-1 550 V 0.32 12 A STF13NM50N 550 V 0.32 12 A(1) 3 2 1 STP13NM50N 550 V 0.32 12 A TO-247 STW13N

 8.2. Size:650K  st
 stf13n95k3 stp13n95k3 stw13n95k3.pdf

STF13N95K3 STP13N95K3, STW13N95K3 N-channel 950 V, 0.68 , 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3 Power MOSFET Features Order codes VDSS RDS(on)max ID PW STF13N95K3 40 W 3 3 2 2 1 STP13N95K3 950 V

 8.3. Size:577K  st
 stb13nm50n stf13nm50n stp13nm50n stw13nm50n.pdf

STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB13NM50N 550 V 0.32 12 A TO-220 I PAK STB13NM50N-1 550 V 0.32 12 A STF13NM50N 550 V 0.32 12 A(1) 3 2 1 STP13NM50N 550 V 0.32 12 A TO-247 STW13N

 8.4. Size:1131K  st
 stf13n60m2 stfi13n60m2.pdf

STF13N60M2, STFI13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STF13N60M2 650 V 0.38 11 A STFI13N60M2 3 2 Extremely low gate charge 1 1 2 3 TO-220FP Lower RDS(on) x area vs previous generation I2PAKFP Low gate input r

 8.5. Size:781K  st
 stf13nm60n-h.pdf

STF13NM60N-H N-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFET in TO-220FP Features VDSS RDS(on) Type ID (@Tjmax) max STF13NM60N-H 650 V

 8.6. Size:1276K  st
 stb13nm60n std13nm60n stf13nm60n stp13nm60n stw13nm60n.pdf

STB13NM60N,STD13NM60N,STF13NM60N STP13NM60N,STW13NM60N N-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220, TO-247 Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 STB13NM60N 650 V

 8.7. Size:1760K  st
 stb13n80k5 stf13n80k5 stp13n80k5 stw13n80k5.pdf

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 N-channel 800 V, 0.37 typ., 12 A SuperMESH 5 Power MOSFETs in D PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDS RDS(on) ID PTOT 3 1 STB13N80K5 190 W 3 D2PAK 2 1 STF13N80K5 35 W TO-220FP 800 V 0.45 12 A TAB STP13N80K5 190 W STW13N80K5 Worldwide best FOM (figur

 8.8. Size:1546K  st
 std13nm60nd stf13nm60nd stp13nm60nd.pdf

STD13NM60ND, STF13NM60ND, STP13NM60ND N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB Order codes VDS @ TJmax RDS(on) max ID 3 1 3 STD13NM60ND 2 1 DPAK STF13NM60ND 650 V 0.38 11 A TO-220FP STP13NM60ND TAB The worldwide best RDS(on)* area among fast recove

 8.9. Size:443K  st
 stf13n60dm2.pdf

STF13N60DM2 Datasheet N-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP package VDS RDS(on) max. ID Order codes STF13N60DM2 600 V 0.365 11 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 3 2 1 100% avalanche tested Extremely high dv/dt ruggedness TO-220FP Zener-protected D(2) A

 8.10. Size:856K  st
 stf13n95k3 stfi13n95k3 stp13n95k3 stw13n95k3.pdf

 8.11. Size:564K  st
 stf13n65m2 stfi13n65m2.pdf

 8.12. Size:984K  st
 stf13nm60n sti13nm60n stp13nm60n stu13nm60n stw13nm60n.pdf

STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N N-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFET in TO-220FP, I PAK, TO-220, IPAK, TO-247 packages Datasheet production data Features TAB VDSS RDS(on) Order codes ID (@Tjmax) max 3 3 2 2 1 STF13NM60N 1 I PAK TO-220FP STI13NM60N STP13NM60N 650 V

 8.13. Size:200K  inchange semiconductor
 stf13nm60n.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STF13NM60N FEATURES Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage