STF14NM50N Todos los transistores

 

STF14NM50N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STF14NM50N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm
   Paquete / Cubierta: TO220FP

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STF14NM50N Datasheet (PDF)

 ..1. Size:1281K  st
stb14nm50n std14nm50n stp14nm50n stf14nm50n.pdf

STF14NM50N
STF14NM50N

STB14NM50N, STD14NM50NSTF14NM50N, STP14NM50NN-channel 500 V, 0.28 , 12 A MDmesh II Power MOSFETin DPAK, D2PAK, TO-220 and TO-220FPFeaturesVDSS @ RDS(on) Type ID3TJmax max13STB14NM50N2DPAK1STD14NM50N550 V

 ..2. Size:1066K  st
stb14nm50n std14nm50n stf14nm50n stp14nm50n.pdf

STF14NM50N
STF14NM50N

STB14NM50N, STD14NM50NSTF14NM50N, STP14NM50NN-channel 500 V, 0.28 , 12 A MDmeshTM II Power MOSFETin DPAK, D2PAK, TO-220 and TO-220FPFeaturesVDSS @ RDS(on) Type ID3TJmax max13STB14NM50N2DPAK1STD14NM50N550 V

 ..3. Size:1269K  st
stf14nm50n sti14nm50n stp14nm50n.pdf

STF14NM50N
STF14NM50N

STF14NM50N, STI14NM50N,STP14NM50NN-channel 500 V, 0.28 typ., 12 A MDmesh II Power MOSFETsin TO-220FP, IPAK and TO-220 packagesDatasheet - production dataFeatures VDS @ RDS(on) Order codes IDTJmax max3STF14NM50N21STI14NM50N 550 V 0.32 12 A TO-220FPSTP14NM50NTABTAB 100% avalanche tested Low input capacitance and gate charge33TO-220 2I

 7.1. Size:548K  st
sti14nm65n stp14nm65n stw14nm65n stb14nm65n stf14nm65n.pdf

STF14NM50N
STF14NM50N

STB14NM65N, STF14NM65NSTI14NM65N,STP14NM65N,STW14NM65NN-channel 650 V, 0.33 , 12 A MDmesh II Power MOSFETTO-220, TO-220FP, D2PAK, I2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@TJmax) max32312STI14NM65N 710 V

 7.2. Size:546K  st
stb14nm65n stb14nm65n stf14nm65n sti14nm65n stp14nm65n stw14nm65n stf14nm65n sti14nm65n stw14nm65n.pdf

STF14NM50N
STF14NM50N

STB14NM65N, STF14NM65NSTI14NM65N,STP14NM65N,STW14NM65NN-channel 650 V, 0.33 , 12 A MDmesh II Power MOSFETTO-220, TO-220FP, D2PAK, I2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@TJmax) max32312STI14NM65N 710 V

 9.1. Size:585K  st
stf140n8f7.pdf

STF14NM50N
STF14NM50N

STF140N8F7 N-channel 80 V, 3.5 m typ., 64 A STripFET F7 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF140N8F7 80 V 4.3 m 64 A 35 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Application

 9.2. Size:673K  st
stf140n6f7.pdf

STF14NM50N
STF14NM50N

STF140N6F7 N-channel 60 V, 0.0031 typ., 70 A STripFET F7 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF140N6F7 60 V 0.0035 70 A 33 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applica

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History: GSM3025S

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