APT10M25SVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT10M25SVR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Qgⓘ - Carga de la puerta: 150 nC
   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 1600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: D3PAK

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APT10M25SVR Datasheet (PDF)

..1. Size:68K apt
apt10m25svr.pdf

APT10M25SVR100V 75A 0.025POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

6.1. Size:65K apt
apt10m25bvr.pdf

APT10M25BVR100V 75A 0.025POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

6.2. Size:69K apt
apt10m25.pdf

APT10M25BVFR100V 75A 0.025POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

6.3. Size:69K apt
apt10m25bvfr.pdf

6.4. Size:375K inchange semiconductor
apt10m25bvr.pdf

isc N-Channel MOSFET Transistor APT10M25BVRFEATURESDrain Current I =75A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =0.025(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

Otros transistores... APT10M11B2VR , APT10M11JVR , APT10M11LVR , APT10M19BVFR , APT10M19BVR , APT10M19SVR , APT10M25BVFR , APT10M25BVR , AO3401 , APT1201R5BVR , APT1201R6BVR , APT12040JVR , APT12080JVR , APT12080LVR , APT20M11JVFR , APT20M11JVR , APT20M13PVR .

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