STF8NK100Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STF8NK100ZSTP8NK100ZN-CHANNEL 1000V - 1.60 - 6.5A - TO-220 - TO-220FPZener-Protected SuperMESH MOSFETGeneral featuresVDSS RDS(on) ID PwTypeSTF8NK100Z 1000 V

STP8NK85ZSTF8NK85ZN-channel 850V - 1.1 - 6.7A - TO-220 /TO-220FPZener - protected SuperMESH Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP8NK85Z 850 V

STP8NK85ZSTF8NK85ZN-channel 850V - 1.1 - 6.7A - TO-220 /TO-220FPZener - protected SuperMESH Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP8NK85Z 850 V

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

STD8NM50N, STF8NM50NSTP8NM50N, STU8NM50NN-channel 500 V, 0.73 , 5 A MDmeshII Power MOSFETin DPAK, IPAK, TO-220 and TO-220FPFeaturesOrder codes VDSS@TJMAX RDS(on)max. ID3312STD8NM50N1DPAKSTF8NM50NIPAK550 V

STF8N60DM2 N-channel 600 V, 550 m typ., 8 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF8N60DM2 600 V 600 m 8 A 25 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness

STD8NM60ND, STF8NM60NDSTP8NM60ND, STU8NM60NDN-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STD8NM60ND 650 V

STB8N65M5, STD8N65M5, STF8N65M5STI8N65M5, STP8N65M5, STU8N65M5N-channel 650 V, 0.56 , 7 A MDmesh V Power MOSFETin DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAKFeaturesType VDSS @ TJmax RDS(on) max. ID3STB8N65M5133STD8N65M522DPAK1 1STF8N65M5TO-220710 V

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

STB8N65M5, STD8N65M5, STF8N65M5STI8N65M5, STP8N65M5, STU8N65M5N-channel 650 V, 0.56 , 7 A MDmesh V Power MOSFETin DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAKFeaturesType VDSS @ TJmax RDS(on) max. ID3STB8N65M5133STD8N65M522DPAK1 1STF8N65M5TO-220710 V

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

STF8N80K5, STFI8N80K5N-channel 800 V, 0.8 typ., 6 A MDmesh K5 Power MOSFET in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on)max. ID PTOTSTF8N80K5800 V 0.95 6 A 25 WSTFI8N80K5 Industrys lowest RDS(on) x area Industrys best figure of merit (FoM) 3122 Ultra low gate charge13TO-220FPI2PAKFP (TO-2

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STF8N65M5FEATURESExcellent switching performanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSSV Gate-