APT12080JVR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT12080JVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 450 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 530 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: SOT227

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APT12080JVR datasheet

 ..1. Size:203K  apt
 apt12080jvr.pdf pdf_icon

APT12080JVR

APT12080JVR 1200V 15A 0.800W POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T

 4.1. Size:112K  apt
 apt12080jvfr.pdf pdf_icon

APT12080JVR

APT12080JVFR 1200V 15A 0.800 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" ISOTOP also achieves faster switching speeds through optimized gate layout. D Faster Swit

 6.1. Size:111K  apt
 apt12080b2vfr.pdf pdf_icon

APT12080JVR

APT12080B2VFR APT12080LVFR 1200V 16A 0.800 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement T-MAX TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 6.2. Size:61K  apt
 apt12080lvr.pdf pdf_icon

APT12080JVR

APT12080LVR 1200V 16A 0.800 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

MOSTRAR MÁS

Otros transistores... APT10M19BVR, APT10M19SVR, APT10M25BVFR, APT10M25BVR, APT10M25SVR, APT1201R5BVR, APT1201R6BVR, APT12040JVR, IRFZ48N, APT12080LVR, APT20M11JVFR, APT20M11JVR, APT20M13PVR, APT20M19JVR, APT20M22B2VFR, APT20M22B2VR, APT20M22JVFR