STL13NM60N Todos los transistores

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 stl13nm60n.pdf

STL13NM60N N-channel 600 V, 0.320 typ., 10 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code VDS @ Tjmax RDS(on) max. ID S ) Bottom view S(3) S(3) STL13NM60N 650 V 0.385 10 A G(1) D(2) 100% avalanche tested Low input capacitance and gate charge Low gate input resistance PowerFLAT 8x8 HV Applicatio

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 stl13n65m2.pdf

STL13N65M2 N-channel 650 V, 0.365 typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code VDS RDS(on) max ID STL13N65M2 650 V 0.475 6.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 1 2 3 100% avalanche tested 4 Zener-protected PowerFLAT 5x6 HV Applications S

 8.2. Size:1047K  st
 stl13n60m2.pdf

STL13N60M2 N-channel 600 V, 0.39 typ., 7 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STL13N60M2 650 V 0.42 7 A Extremely low gate charge Lower RDS(on) x area vs previous generation 1 2 3 Low gate input resistance 4 100% avalanche tested PowerFLAT 5x6

 9.1. Size:1198K  st
 stl130n8f7.pdf

STL130N8F7 N-channel 80 V, 3 m , 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT 3.6 m STL130N8F7 80 V 130 A 135 W (VGS=10 V) Ultra low on-resistance 1 2 3 100% avalanche tested 4 Applications PowerFLAT 5x6 Switching applications Description Figure 1. Internal schemati

 9.2. Size:575K  st
 stl13dp10f6.pdf

STL13DP10F6 Dual P-channel 100 V, 0.136 typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island Datasheet - production data Features VDS RDS(on) max. ID 1 Order code 4 STL13DP10F6 100 V 0.18 3.3 A 1 RDS(on) * Qg industry benchmark 8 4 Extremely low on-resistance RDS(on) 5 High avalanche ruggedness PowerFLAT 5x6 Low gat

 9.3. Size:667K  st
 stl130n6f7.pdf

STL130N6F7 N-channel 60 V, 0.003 typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max I DS DS(on) D STL130N6F7 60 V 0.0035 130 A Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications

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 2stl1360 2stx1360.pdf

2STL1360 2STX1360 Low voltage fast-switching NPN power transistors Features Very low collector-emitter saturation voltage High current gain characteristic Fast-switching speed Applications Emergency lighting LED TO-92 TO-92L Voltage regulation Relay drive Figure 1. Internal schematic diagram Description The devices are NPN transistors manufactured us