STL13NM60N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STL13NM60N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.385 Ohm
   Paquete / Cubierta: POWERFLAT8X8HV

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STL13NM60N Datasheet (PDF)

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stl13nm60n.pdf

STL13NM60NN-channel 600 V, 0.320 typ., 10 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet - production dataFeatures Order code VDS @ Tjmax RDS(on) max. IDS ) Bottom viewS(3)S(3) STL13NM60N 650 V 0.385 10 A G(1)D(2) 100% avalanche tested Low input capacitance and gate charge Low gate input resistancePowerFLAT 8x8 HVApplicatio

8.1. Size:636K st
stl13n65m2.pdf

STL13N65M2N-channel 650 V, 0.365 typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL13N65M2 650 V 0.475 6.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 123 100% avalanche tested4 Zener-protectedPowerFLAT 5x6 HVApplications S

8.2. Size:1047K st
stl13n60m2.pdf

STL13N60M2N-channel 600 V, 0.39 typ., 7 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTL13N60M2 650 V 0.42 7 A Extremely low gate charge Lower RDS(on) x area vs previous generation123 Low gate input resistance4 100% avalanche testedPowerFLAT 5x6

9.1. Size:1198K st
stl130n8f7.pdf

STL130N8F7N-channel 80 V, 3 m, 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max ID PTOT3.6 m STL130N8F7 80 V 130 A 135 W(VGS=10 V) Ultra low on-resistance123 100% avalanche tested4ApplicationsPowerFLAT 5x6 Switching applicationsDescriptionFigure 1. Internal schemati

9.2. Size:575K st
stl13dp10f6.pdf

STL13DP10F6Dual P-channel 100 V, 0.136 typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double islandDatasheet - production dataFeatures VDS RDS(on) max. ID1 Order code4 STL13DP10F6 100 V 0.18 3.3 A 1 RDS(on) * Qg industry benchmark84 Extremely low on-resistance RDS(on)5 High avalanche ruggednessPowerFLAT 5x6 Low gat

9.3. Size:667K st
stl130n6f7.pdf

STL130N6F7 N-channel 60 V, 0.003 typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max I DS DS(on) DSTL130N6F7 60 V 0.0035 130 A Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications

9.4. Size:619K st
2stl1360 2stx1360.pdf

2STL13602STX1360Low voltage fast-switching NPN power transistorsFeatures Very low collector-emitter saturation voltage High current gain characteristic Fast-switching speedApplications Emergency lighting LEDTO-92 TO-92L Voltage regulation Relay driveFigure 1. Internal schematic diagramDescriptionThe devices are NPN transistors manufactured us

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