APT20M11JVR Todos los transistores

 

APT20M11JVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT20M11JVR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 700 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 175 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 690 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 4100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: SOT227
 

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APT20M11JVR Datasheet (PDF)

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 apt20m11jvr.pdf pdf_icon

APT20M11JVR

APT20M11JVR200V 175A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

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 apt20m11jvfr.pdf pdf_icon

APT20M11JVR

APT20M11JVFR200V 175A 0.011POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.ISOTOP Fast Recovery Body Diode 100% Avalanche

 5.1. Size:166K  apt
 apt20m11jll.pdf pdf_icon

APT20M11JVR

APT20M11JLL200V 176A 0.011R POWER MOS 7 MOSFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses"UL Recognized"along with exceptionall

 5.2. Size:167K  apt
 apt20m11jfll.pdf pdf_icon

APT20M11JVR

APT20M11JFLL200V 176A 0.011R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fast switchin

MOSTRAR MÁS

Otros transistores... APT10M25BVR , APT10M25SVR , APT1201R5BVR , APT1201R6BVR , APT12040JVR , APT12080JVR , APT12080LVR , APT20M11JVFR , 60N06 , APT20M13PVR , APT20M19JVR , APT20M22B2VFR , APT20M22B2VR , APT20M22JVFR , APT20M22JVR , APT20M22LVFR , APT20M22LVR .

History: STP180N10F3 | FRE264H | 2N7272R

 

 
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