STL7NM60N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STL7NM60NN-channel 600 V, 0.805 , 5.8 A PowerFLAT (5x5)MDmesh II Power MOSFETFeaturesVDSS @ RDS(on) Order code IDTJMAX max.STL7NM60N 650 V

STL7N10F7N-channel 100 V, 0.027 typ., 7 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 3.3x3.3 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL7N10F7 100 V 0.035 7 A N-channel enhancement mode123 Lower RDS(on) x area vs previous generation4 100% avalanche ratedPowerFLAT 3.3x3.3Applications Switching app

STL7N6LF3Automotive-grade N-channel 60 V, 35 m typ., 6.5 A STripFET F3 Power MOSFET in a PowerFLAT 5x6 packageDatasheet production dataFeatures Order code VDS RDS(on) max IDSTL7N6LF3 60 V 43 m 6.5 A Designed for automotive applications and 1AEC-Q101 qualified234 Logic level VGS(th) 175 C junction temperature 100% avalanche ratedPower

STL7N60M2 N-channel 600 V, 0.92 typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code V @ Tjmax R max I DS DS(on) DSTL7N60M2 650 V 1.05 5 A 675 Extremely low gate charge 4 Excellent output capacitance (COSS) profile 100% avalanche tested 112 Zener-protected PowerFLAT 5x5 Applic

STL7N80K5N-channel 800 V, 0.95 typ., 3.6 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT 5x6 VHV packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. IDSTL7N80K5 800 V 1.2 3.6 A Outstanding RDS(on)*area1 Worldwide best FOM (figure of merit)23 Ultra low gate charge4 100% avalanche testedPowerFLAT 5x6 VHV Zener