STP10NK80ZFP
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP10NK80ZFP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 800
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 9
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20
nS
Cossⓘ - Capacitancia
de salida: 205
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9
Ohm
Paquete / Cubierta:
TO220FP
- Selección de transistores por parámetros
STP10NK80ZFP
Datasheet (PDF)
..1. Size:455K st
stp10nk80zfp stp10nk80z stw10nk80z.pdf 
STP10NK80ZFPSTP10NK80Z - STW10NK80ZN-channel 800V - 0.78 - 9A - TO-220/FP-TO-247Zener-protected superMESHTM MOSFETGeneral featuresType VDSS RDS(on) ID PwSTP10NK80Z 800V
..2. Size:439K st
stp10nk80z stp10nk80zfp stw10nk80z.pdf 
STP10NK80Z, STP10NK80ZFP,STW10NK80ZN-channel 800 V, 0.78 , 9 A Zener-protected SuperMESH Power MOSFETs in TO-220, TO-220FP and TO-247 packagesDatasheet production dataFeaturesTABType VDSS RDS(on) ID PwSTP10NK80Z 800V
4.1. Size:458K st
stp10nk80z.pdf 
STP10NK80Z - STP10NK80ZFPSTW10NK80ZN-CHANNEL 800V - 0.78 - 9A TO-220/TO-220FP/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP10NK80Z 800 V
7.1. Size:384K st
stp10nk70z.pdf 
STP10NK70ZSTP10NK70ZFPN-CHANNEL 700V - 0.75 - 8.6A TO-220/TO-220FPZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP10NK70Z 700 V
7.2. Size:938K st
stb10nk60z stp10nk60z stp10nk60zfp stw10nk60z.pdf 
STB10NK60Z, STP10NK60Z,STP10NK60ZFP, STW10NK60ZN-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFETin I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packagesDatasheet - production dataFeaturesTABRDS(on) Type VDSS ID PwmaxTAB33 2STB10NK60Z-1 600 V
7.3. Size:274K st
stp10nk70zfp stp10nk70z.pdf 
STP10NK70ZFPSTP10NK70ZN-CHANNEL 700V - 0.75 - 8.6A - TO220-TO220FPZener-Protected SuperMESH MOSFETGeneral features PackageVDSS RDS(on) IDType PwSTP10NK70Z 700 V
7.4. Size:503K st
stp10nk50z.pdf 
STP10NK50ZN-channel 500 V, 0.55 , 9 A Zener-protected SuperMESH Power MOSFETs in TO-220 packageDatasheet obsolete productFeaturesOrder code VDSS RDS(on) max ID PTOTTABSTP10NK50Z 500 V
7.5. Size:528K st
stp10nk50z stf10nk50z.pdf 
STP10NK50ZSTF10NK50ZN-CHANNEL 500V - 0.55 - 9A TO-220 / TO-220FPZener-Protected SuperMESHMOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP10NK50Z 500 V
7.6. Size:858K st
stb10nk60z stp10nk60z stw10nk60z.pdf 
STB10NK60Z, STP10NK60ZSTW10NK60ZN-channel 650 V, 0.65 , 10 A, SuperMESH Power MOSFETZener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247FeaturesRDS(on) Type VDSS ID Pwmax3STB10NK60Z-1 600 V
7.7. Size:280K st
stp10nk70z stp10nk70zfp.pdf 
STP10NK70ZFPSTP10NK70ZN-CHANNEL 700V - 0.75 - 8.6A - TO220-TO220FPZener-Protected SuperMESH MOSFETGeneral features PackageVDSS RDS(on) IDType PwSTP10NK70Z 700 V
7.8. Size:684K st
stp10nk60z.pdf 
STP10NK60Z/FP, STB10NK60Z/-1STW10NK60ZN-CHANNEL 600V-0.65-10A TO-220/FP/D2PAK/I2PAK/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP10NK60Z 600 V
7.9. Size:938K st
stb10nk60z-1 stb10nk60zt4 stp10nk60zfp.pdf 
STB10NK60Z, STP10NK60Z,STP10NK60ZFP, STW10NK60ZN-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFETin I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packagesDatasheet - production dataFeaturesTABRDS(on) Type VDSS ID PwmaxTAB33 2STB10NK60Z-1 600 V
7.10. Size:201K inchange semiconductor
stp10nk60zfp.pdf 
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP10NK60ZFPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATIN
7.11. Size:253K inchange semiconductor
stp10nk70zfp.pdf 
isc N-Channel MOSFET Transistor STP10NK70ZFPFEATURESDrain Current : I = 8.6A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)@V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
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History: SI2202
| SL4813A
| SIHF10N40D