STP12N65M5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP12N65M5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 70 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua
de drenaje: 8.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 9.5 nS
Cossⓘ - Capacitancia de salida: 22 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.43 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de STP12N65M5 MOSFET
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STP12N65M5 datasheet
..1. Size:1040K st
std12n65m5 stf12n65m5 sti12n65m5 stp12n65m5 stu12n65m5.pdf 
STD12N65M5, STF12N65M5, STI12N65M5 STP12N65M5, STU12N65M5 N-channel 650 V, 0.39 , 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK Features VDSS @ RDS(on) Type ID PTOT 3 TJmax max 2 3 1 2 1 STD12N65M5 8.5 A 70 W IPAK TO-220 STF12N65M5 8.5 A(1) 25 W 3 STI12N65M5 710 V
7.1. Size:391K st
stp12n60m2.pdf
STP12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STP12N60M2 600 V 0.450 9 A 85 W Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications F
8.1. Size:581K st
std12nm50n stf12nm50n sti12nm50n stp12nm50n.pdf
STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB12NM50N 550 V 0.38 11 A I PAK TO-220 STD12NM50N 550 V 0.38 11 A 3 1 STI12NM50N 550 V 0.38 11 A DPAK STF12NM50N 550 V 0.38 11 A (1) STP12NM50N 5
8.2. Size:478K st
stb12nm50fdt4 stp12nm50fd stw14nm50fd.pdf
STB12NM50FD - STB12NM50FD-1 STP12NM50FD/FP - STW14NM50FD N-channel 500V - 0.32 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID Pw 3 3 STB12NM50FD 500V
8.3. Size:586K st
stb12nm50n std12nm50n sti12nm50n stf12nm50n stp12nm50n.pdf
STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB12NM50N 550 V 0.38 11 A I PAK TO-220 STD12NM50N 550 V 0.38 11 A 3 1 STI12NM50N 550 V 0.38 11 A DPAK STF12NM50N 550 V 0.38 11 A (1) STP12NM50N 5
8.4. Size:542K st
stp12nm50 stp12nm50fp stb12nm50 stb12nm50-1.pdf
STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) 3 3 STB12NM50 550V
8.5. Size:806K st
sth12n120k5-2 stp12n120k5 .pdf
STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 typ.,12 A MDmesh K5 Power MOSFETs in H PAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V R max. I P DS DS(on) D TOT STH12N120K5-2 STP12N120K5 2PAK-2 H TO-220 1200 V 0.69 12 A 250 W STW12N120K5 STWA12N120K5 Worldwide best FOM (figure of m
8.6. Size:821K st
stb12n120k5 stfw12n120k5 stp12n120k5 stw12n120k5.pdf
STB12N120K5, STFW12N120K5 STP12N120K5, STW12N120K5 N-channel 1200 V, 0.58 , 12 A D PAK, TO-3PF, TO-220, TO-247 Zener-protected SuperMESH 5 Power MOSFET Preliminary data Features TAB 1 1 1 RDS(on) Order codes VDSS ID PW 2 max. 3 3 1 2 STB12N120K5 250 W 1 D PAK TO-3PF STFW12N120K5 63 W 1200 V
8.7. Size:526K st
stb12nk80z stp12nk80z stw12nk80z.pdf
STB12NK80Z STP12NK80Z - STW12NK80Z N-channel 800V - 0.65 - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH Power MOSFET Features VDSS Type RDS(on) ID PW (@Tjmax) STB12NK80Z 800V
8.8. Size:286K st
stp12nk30z.pdf
STP12NK30Z N-CHANNEL 300V - 0.36 - 9A- TO-220 Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID (1) Pw (1) STP12NK30Z 300 V
8.9. Size:618K st
stp12n50m2.pdf
STP12N50M2 N-channel 500 V, 0.325 typ.,10 A MDmesh II Plus low Qg Power MOSFET in a TO-220 package Datasheet - preliminary data Features Order code VDS RDS(on) max ID TAB STP12N50M2 500 V 0.38 10 A Extremely low gate charge Lower RDS(on) x area vs previous generation 3 Low gate input resistance 2 1 100% avalanche tested TO-220 Zener-protected Appl
8.10. Size:154K st
stp12nb30.pdf
STP12NB30 STP12NB30FP N-CHANNEL 300V - 0.34 - 12A TO-220/TO-220FP PowerMESH MOSFET TYPE VDSS RDS(on) ID STP12NB30 300 V
8.11. Size:618K st
stb12nm50t4 stp12nm50 stp12nm50fp.pdf
STB12NM50T4, STP12NM50, STP12NM50FP Datasheet N-channel 500 V, 300 m typ., 12 A MDmesh Power MOSFETs in a D PAK, TO-220 and TO-220FP packages Features TAB VDS RDS(on) max. ID Order codes 3 1 2 D PAK 3 STB12NM50T4 2 1 TO-220FP TAB STP12NM50 500 V 350 m 12 A STP12NM50FP 3 2 100% avalanche tested 1 TO-220 Low input capacitance and gate charge Low gate inp
8.12. Size:541K st
stb12nm50t4 stp12nm50fp.pdf
STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) 3 3 STB12NM50 550V
8.14. Size:618K st
stb12nm60n-1 stf12nm60n stp12nm60n stw12nm60n.pdf
STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features VDSS Type RDS(on) ID 3 (@Tjmax) 3 1 2 1 STB12NM60N 650V
8.15. Size:483K st
stb12nm50fd stp12nm50fd-fp stw14nm50fd.pdf
STB12NM50FD - STB12NM50FD-1 STP12NM50FD/FP - STW14NM50FD N-channel 500V - 0.32 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID Pw 3 3 STB12NM50FD 500V
8.16. Size:590K st
stw12n120k5 stwa12n120k5 sth12n120k5 stp12n120k5.pdf
STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 typ.,12 A MDmesh K5 Power MOSFETs in H PAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V R max. I P DS DS(on) D TOT STH12N120K5-2 STP12N120K5 2PAK-2 H TO-220 1200 V 0.69 12 A 250 W STW12N120K5 STWA12N120K5 Worldwide best FOM (figure of m
8.18. Size:221K inchange semiconductor
stp12nm50fp.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor STP12NM50FP FEATURES Drain-source on-resistance RDS(on) 0.35 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Be suitable for increasing power density of high voltage converters allowing system miniaturization and
Otros transistores... STP11NM60, STP11NM60FD, STP11NM60ND, STP11NM80, STP120N4F6, STP120NF04, STP120NF10, STP12N120K5, IRLB4132, STP12NK30Z, STP12NK60Z, STP12NK80Z, STP12NM50, STP12PF06, STP130NH02L, STP13N95K3, STP13NK60Z
