STP13N95K3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP13N95K3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 190 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 950 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 16 nS
Cossⓘ - Capacitancia de salida: 117 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
Encapsulados: TO220
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STP13N95K3 datasheet
..1. Size:650K st
stf13n95k3 stp13n95k3 stw13n95k3.pdf 
STF13N95K3 STP13N95K3, STW13N95K3 N-channel 950 V, 0.68 , 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3 Power MOSFET Features Order codes VDSS RDS(on)max ID PW STF13N95K3 40 W 3 3 2 2 1 STP13N95K3 950 V
8.1. Size:489K st
stb13nk60zt4 stp13nk60z stp13nk60zfp stw13nk60z.pdf
STB13NK60ZT4, STP13NK60Z STP13NK60ZFP, STW13NK60Z N-channel 600 V, 0.48 , 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH Power MOSFET Features RDS(on) Type VDSS ID Pw max 3 3 2 STB13NK60ZT4 600 V
8.2. Size:491K st
stb13nk60zt4 stw13nk60z stp13nk60zfp.pdf
STB13NK60ZT4, STP13NK60Z STP13NK60ZFP, STW13NK60Z N-channel 600 V, 0.48 , 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH Power MOSFET Features RDS(on) Type VDSS ID Pw max 3 3 2 STB13NK60ZT4 600 V
8.3. Size:657K st
stp13nk60z.pdf
STP13NK60Z/FP, STB13NK60Z STB13NK60Z-1, STW13NK60Z N-CHANNEL 600V-0.48 -13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP13NK60Z 600 V
8.4. Size:578K st
stb13nm50n-1 stb13nm50n stf13nm50n stp13nm50n stw13nm50n.pdf
STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB13NM50N 550 V 0.32 12 A TO-220 I PAK STB13NM50N-1 550 V 0.32 12 A STF13NM50N 550 V 0.32 12 A(1) 3 2 1 STP13NM50N 550 V 0.32 12 A TO-247 STW13N
8.5. Size:1256K st
stp13n60m2 stu13n60m2 stw13n60m2.pdf
STP13N60M2, STU13N60M2, STW13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet - production data Features TAB TAB Order codes VDS @ TJmax RDS(on) max ID 3 2 1 STP13N60M2 3 2 1 IPAK STU13N60M2 650 V 0.38 11 A TO-220 STW13N60M2 Extremely low gate charge Lower RDS(on) x area vs previous g
8.6. Size:577K st
stb13nm50n stf13nm50n stp13nm50n stw13nm50n.pdf
STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB13NM50N 550 V 0.32 12 A TO-220 I PAK STB13NM50N-1 550 V 0.32 12 A STF13NM50N 550 V 0.32 12 A(1) 3 2 1 STP13NM50N 550 V 0.32 12 A TO-247 STW13N
8.7. Size:514K st
stp13nk50z.pdf
STF13NK50Z STP13NK50Z, STW13NK50Z N-channel 500 V, 0.40 , 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET Features RDS(on) Type VDSS ID Pw max STF13NK50Z 500 V
8.9. Size:1276K st
stb13nm60n std13nm60n stf13nm60n stp13nm60n stw13nm60n.pdf
STB13NM60N,STD13NM60N,STF13NM60N STP13NM60N,STW13NM60N N-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220, TO-247 Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 STB13NM60N 650 V
8.10. Size:1760K st
stb13n80k5 stf13n80k5 stp13n80k5 stw13n80k5.pdf
STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 N-channel 800 V, 0.37 typ., 12 A SuperMESH 5 Power MOSFETs in D PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDS RDS(on) ID PTOT 3 1 STB13N80K5 190 W 3 D2PAK 2 1 STF13N80K5 35 W TO-220FP 800 V 0.45 12 A TAB STP13N80K5 190 W STW13N80K5 Worldwide best FOM (figur
8.11. Size:1546K st
std13nm60nd stf13nm60nd stp13nm60nd.pdf
STD13NM60ND, STF13NM60ND, STP13NM60ND N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB Order codes VDS @ TJmax RDS(on) max ID 3 1 3 STD13NM60ND 2 1 DPAK STF13NM60ND 650 V 0.38 11 A TO-220FP STP13NM60ND TAB The worldwide best RDS(on)* area among fast recove
8.12. Size:545K st
stp13n65m2 stu13n65m2.pdf
STP13N65M2, STU13N65M2 N-channel 650 V, 0.37 typ.,10 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features RDS(on) Order code VDS ID max TAB STP13N65M2 TAB 650 V 0.43 10A STU13N65M2 3 2 1 3 2 Extremely low gate charge 1 TO-220 Excellent output capacitance (Coss) profile IPAK 100% avalanche tested Zener-pr
8.13. Size:451K st
stp13n60dm2.pdf
STP13N60DM2 Datasheet N-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a TO-220 package Features VDS RDS(on ) max. ID Order code TAB STP13N60DM2 600 V 0.365 11 A Fast-recovery body diode 3 2 Extremely low gate charge and input capacitance 1 Low on-resistance TO-220 100% avalanche tested Extremely high dv/dt ruggedness D(2, TAB) Ze
8.14. Size:984K st
stf13nm60n sti13nm60n stp13nm60n stu13nm60n stw13nm60n.pdf
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N N-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFET in TO-220FP, I PAK, TO-220, IPAK, TO-247 packages Datasheet production data Features TAB VDSS RDS(on) Order codes ID (@Tjmax) max 3 3 2 2 1 STF13NM60N 1 I PAK TO-220FP STI13NM60N STP13NM60N 650 V
8.15. Size:516K st
stf13nk50z stp13nk50z stw13nk50z.pdf
STF13NK50Z STP13NK50Z, STW13NK50Z N-channel 500 V, 0.40 , 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET Features RDS(on) Type VDSS ID Pw max STF13NK50Z 500 V
8.16. Size:189K inchange semiconductor
stp13nm60n.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP13NM60N FEATURES Typical R (on)=0.28 DS Low gate input resistance 100% avalanche tested Low input capacitance and gate charge Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
8.17. Size:208K inchange semiconductor
stp13nm60nd.pdf
INCHANGE Semiconductor isc N-Channel Mosfet Transistor STP13NM60ND FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
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