STP16NF25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STP16NF25

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 90 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 13 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 18 nC

Resistencia drenaje-fuente RDS(on): 0.235 Ohm

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de MOSFET STP16NF25

STP16NF25 Datasheet (PDF)

1.1. std16nf25 stf16nf25 stp16nf25.pdf Size:466K _st

STD16NF25 STF16NF25 - STP16NF25 N-channel 250V - 0.195? - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET� II Power MOSFET Features RDS(on) Type VDSS ID Pw Max 3 STD16NF25 250V <0.235? 13A 90W 1 3 2 STF16NF25 250V <0.235? 13A(1) 25W 1 DPAK STP16NF25 250V <0.235? 13A 90W TO-220 1. Limited only by maximum temperature allowed � Exceptional dv/dt capability 3 2 1 � 100% avala

3.1. stp16nf06lfp.pdf Size:259K _upd-mosfet

STP16NF06L STP16NF06LFP N-CHANNEL 60V - 0.07 Ω - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STP16NF06L 60 V <0.09 Ω 16 A STP60NF06LFP 60 V <0.09 Ω 11 A ■ TYPICAL RDS(on) = 0.07Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ LOW GATE CHARGE AT 100 oC ■ LOW THRESHOLD DRIVE 3 3 2 2 1 1 DESCRIPTION This Power MOSFET is the latest development of TO-220 TO-

3.2. stp16nf06fp.pdf Size:317K _upd-mosfet

STP16NF06 STP16NF06FP N-channel 60V - 0.08Ω - 16A - TO-220/TO-220FP STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STP16NF06 60V <0.1Ω 16A STP16NF06FP 60V <0.1Ω 11A 3 3 2 2 ■ Exceptional dv/dt capability 1 1 ■ Low gate charge at 100°C TO-220FP TO-220 ■ Application oriented characterization Description This Power MOSFET is the latest developme

3.3. stp16nf06l.pdf Size:337K _st

STP16NF06L STP16NF06LFP N-CHANNEL 60V - 0.07 ? - 16A TO-220/TO-220FP STripFET� II POWER MOSFET TYPE VDSS RDS(on) ID STP16NF06L 60 V <0.09 ? 16 A STP60NF06LFP 60 V <0.09 ? 11 A TYPICAL RDS(on) = 0.07? EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC LOW THRESHOLD DRIVE 3 3 2 2 1 1 DESCRIPTION This Power MOSFET is the latest development of TO-220 TO-220FP STMicroelectronis

3.4. stp16nf06 stp16nf06fp.pdf Size:323K _st

STP16NF06 STP16NF06FP N-channel 60V - 0.08? - 16A - TO-220/TO-220FP STripFET� II Power MOSFET General features Type VDSS RDS(on) ID STP16NF06 60V <0.1? 16A STP16NF06FP 60V <0.1? 11A 3 3 2 2 � Exceptional dv/dt capability 1 1 � Low gate charge at 100�C TO-220FP TO-220 � Application oriented characterization Description This Power MOSFET is the latest development of STMicroele

3.5. stp16nf06.pdf Size:367K _st

STP16NF06 STP16NF06FP N-CHANNEL 60V - 0.08 ? - 16A TO-220/TO-220FP STripFET� II POWER MOSFET TYPE VDSS RDS(on) ID STP16NF06 60 V <0.1 ? 16 A STP60NF06FP 60 V <0.1 ? 11 A TYPICAL RDS(on) = 0.08? EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED 3 3 2 2 CHARACTERIZATION 1 1 TO-220 TO-220FP DESCRIPTION This Power MOSFET is the latest development of STM

3.6. stp16nf06l-fp.pdf Size:274K _st

STP16NF06L STP16NF06LFP N-CHANNEL 60V - 0.07 ? - 16A TO-220/TO-220FP STripFET� II POWER MOSFET TYPE VDSS RDS(on) ID STP16NF06L 60 V <0.09 ? 16 A STP60NF06LFP 60 V <0.09 ? 11 A � TYPICAL RDS(on) = 0.07? � EXCEPTIONAL dv/dt CAPABILITY � LOW GATE CHARGE AT 100 oC � LOW THRESHOLD DRIVE 3 3 2 2 1 1 DESCRIPTION This Power MOSFET is the latest development of TO-220 TO-220FP STMicroelectro

3.7. stp16nf06 istp16nf06.pdf Size:229K _inchange_semiconductor

N-Channel MOSFET Transistor STP16NF06，ISTP16NF06 ·DESCRIPTION ·Drain Current I = 16A@ T =25℃ D C ·Static Drain-Source On-Resistance : R = 100mΩ(Max) DS(on) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·high packing density for low on-resistance，rugged avalanche characteristics and less critical

3.8. stp16nf06.pdf Size:206K _inchange_semiconductor

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP16NF06 ·FEATURES ·Typical R (on)=0.08Ω DS ·With low gate drive requirements ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Solenold and relay dirvers ·DC-DC &DC-CAconverters ·Automotive environment ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SY

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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