APT20M38SVR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT20M38SVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 370 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 67 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 1145 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm

Encapsulados: D3PAK

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APT20M38SVR datasheet

 ..1. Size:76K  apt
 apt20m38svr.pdf pdf_icon

APT20M38SVR

APT20M38SVR 200V 67A 0.038 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 4.1. Size:155K  apt
 apt20m38svfrg.pdf pdf_icon

APT20M38SVR

200V 67A 0.038 APT20M38BVFR APT20M38SVFR APT20M38BVFRG* APT20M38SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power

 6.1. Size:73K  apt
 apt20m38bvr.pdf pdf_icon

APT20M38SVR

APT20M38BVR 200V 67A 0.038 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 6.2. Size:76K  apt
 apt20m38bvfr.pdf pdf_icon

APT20M38SVR

APT20M38BVFR 200V 67A 0.038 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

MOSTRAR MÁS

Otros transistores... APT20M22B2VR, APT20M22JVFR, APT20M22JVR, APT20M22LVFR, APT20M22LVR, APT20M26WVR, APT20M38BVFR, APT20M38BVR, AO4468, APT20M40BVR, APT20M42HVR, APT20M45BVFR, APT20M45BVR, APT20M45SVFR, APT20M45SVR, APT30M19JVFR, APT30M19JVR