2N5484 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5484
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.35 W
Voltaje máximo drenador - fuente |Vds|: 25 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 0.005 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Conductancia de drenaje-sustrato (Cd): 1 pF
Resistencia entre drenaje y fuente RDS(on): 100 Ohm
Paquete / Cubierta: TO92
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2N5484 Datasheet (PDF)
2n5484 2n5485 2n5486 mmbf5484 mmbf5485 mmbf5486.pdf

February 20092N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com2N5484/5485/5486 MMBF5484/5485/5486 Rev. 1.0.0 1 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 2 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 3 2007
2n5484 mmbf5484.pdf

2N5484 MMBF54842N5485 MMBF54852N5486 MMBF5486GSG TO-92SSOT-23 DDMark: 6B / 6M / 6HNOTE: Source & Drain are interchangeableN-Channel RF AmplifierThis device is designed primarily for electronic switchingapplications such as low On Resistance analog switching.Sourced from Process 50.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value
2n5484 sst5484 2n5485 sst5485 2n5486 sst5486.pdf

2N/SST5484 SeriesVishay SiliconixN-Channel JFETs2N5484 SST54842N5485 SST54852N5486 SST5486PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)2N/SST5484 -0.3 to -3 -25 3 12N/SST5485 -0.5 to -4 -25 3.5 42N/SST5486 -2 to -6 -25 4 8FEATURES BENEFITS APPLICATIONSD Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mi
2n5484 2n5485 2n5486.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5486.pdf

2N5486JFET VHF/UHF AmplifiersN-Channel DepletionFeatures Pb-Free Packages are Available*http://onsemi.com1 DRAINMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Rating Symbol Value Unit3GATEDrain-Gate Voltage VDG 25 VdcReverse Gate-Source Voltage VGSR 25 Vdc2 SOURCEDrain Current ID 30 mAdcForward Gate Current IG(f) 10 mAdcTotal Device Dissipation @ TC =
Otros transistores... 2N4391 , 2N4391CSM , 2N4392 , 2N4392CSM , 2N4393 , 2N4393CSM , 2N4416 , 2N5045 , IRF540N , 2N5485 , 2N5486 , 2N6656 , 2N6657 , 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM .



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Recientemente añadidas las descripciónes de los transistores:
MOSFET: MEE7816S-G | MEE7816AS-G | MEE7636-G | MEE7630-G | MEE7298-G | MEE7296-G | MEE72962-G | MEE7292-G | MEE6240T | MEE4298T | MEE4298K-G | MEE4298HT | MEE4298-G | MEE4294T2 | MEE4294P-G | MEE4294P2-G