APT30M40JVFR Todos los transistores

 

APT30M40JVFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT30M40JVFR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 450 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 1500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: SOT227
 

 Búsqueda de reemplazo de APT30M40JVFR MOSFET

   - Selección ⓘ de transistores por parámetros

 

APT30M40JVFR datasheet

 ..1. Size:73K  apt
apt30m40jvfr.pdf pdf_icon

APT30M40JVFR

 4.1. Size:70K  apt
apt30m40jvr.pdf pdf_icon

APT30M40JVFR

APT30M40JVR 300V 70A 0.040 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Faster Switching 100% Avalanc

 6.1. Size:116K  apt
apt30m40b2vfrg.pdf pdf_icon

APT30M40JVFR

APT30M40B2VFR APT30M40LVFR 300V 76A 0.040 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout

 6.2. Size:116K  apt
apt30m40b2vr.pdf pdf_icon

APT30M40JVFR

APT30M40B2VR APT30M40LVR 300V 76A 0.040W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. LVR Faster Switching

Otros transistores... APT20M40BVR , APT20M42HVR , APT20M45BVFR , APT20M45BVR , APT20M45SVFR , APT20M45SVR , APT30M19JVFR , APT30M19JVR , 50N06 , APT30M40JVR , APT30M40LVFR , APT30M40LVR , APT30M70BVFR , APT30M70BVR , APT30M85BVFR , APT30M85BVR , APT30M90AVR .

 

 
Back to Top

 


 
.