STP6N52K3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STB6N52K3, STD6N52K3STF6N52K3, STP6N52K3N-channel 525 V, 1 , 5 A, DPAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) 3Order codes VDSS ID Pwmax132STB6N52K3 5 A 70 WDPAK1STD6N52K3 5 A(1) 25 WTO-220FP525 V

STP6NA60FPN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTP6NA60FP 600 V

STP6NC80Z - STP6NC80ZFPSTB6NC80Z - STB6NC80Z-1N-CHANNEL 800V - 1.5 - 5.4A TO-220/FP/DPAK/IPAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP6NC80Z/FP 800V

STF6N65M2, STP6N65M2, STU6N65M2N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packagesDatasheet - preliminary dataFeaturesTABOrder codes VDS RDS(on) max IDSTF6N65M23 3STP6N65M2 650 V 1.35 4 A2211STU6N65M2TO-220FP TO-220TAB Extremely low gate charge Excellent output capacitance (COSS) profile32 1

STP6NA60STP6NA60FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP6NA60 600 V

STP6NB80STP6NB80FPN-CHANNEL 800V - 1.6 - 5.7A TO-220/TO-220FPPowerMesh MOSFETTYPE VDSS RDS(on) IDSTP6NB80 800 V

STP6NB90STP6NB90FPN - CHANNEL 900V - 1.7 - 5.8A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP6NB90 900 V

STF6N60M2, STP6N60M2, STU6N60M2N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 32 Order codes ID1TJmax maxIPAK3STF6N60M221STP6N60M2 650 V 1.2 4.5 ATO-220FP TABSTU6N60M2 Extremely low gate charge3 Lower RDS(on) x area vs previous

STD6N95K5, STP6N95K5 STU6N95K5, STW6N95K5DatasheetN-channel 950 V, 1 typ., 9 A MDmesh K5 Power MOSFETs in DPAK, TO-220, IPAK and TO-247 packagesFeaturesTABTABOrder codes VDS RDS(on) max. ID PTOT31DPAK STD6N95K53TO-220 STP6N95K521 950 V 1.25 9 A 90 WTABSTU6N95K5STW6N95K5 DPAK 950 V worldwide best RDS(on)32IPAK13 Worldwide best FOM

STP6N60FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP6N60FI 600 V

STx6NM60NN-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max33STB6NM60N 650 V

STF6N62K3, STFI6N62K3, STI6N62K3,STP6N62K3, STU6N62K3N-channel 620 V, 0.95 typ., 5.5 A SuperMESH3 PowerMOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packagesDatasheet - production dataFeatures TABOrder codes VDSS RDS(on) max. ID PTOT33STF6N62K3 30 W2 211STFI6N62K3 30 WTO-220FPIPAKSTI6N62K3 620 V

STB6NK60Z - STB6NK60Z-1STP6NK60ZFP - STP6NK60ZN-channel 600 V - 1 - 6 A - TO-220/TO-220FP/D2PAK/I2PAKZener-Protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) ID PWSTB6NK60Z 600 V

STP6NK60Z - STP6NK60ZFPSTB6NK60Z - STB6NK60Z-1N-CHANNEL 600V - 1 - 6A TO-220/TO-220FP/D2PAK/I2PAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP6NK60Z 600 V

STP6N25STP6N25FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSPRELIMINARY DATATYPE V R IDSS DS(on) DSTP6N25 250 V

STP6NB25STP6NB25FPN-CHANNEL 250V - 0.9 - 5A TO-220/TO-220FPPowerMesh MOSFETTYPE VDSS RDS(on) IDSTP6NB25 250 V

STP6N25STP6N25FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSPRELIMINARY DATATYPE VDSS RDS(on) IDSTP6N25 250 V

STP6NS25N-CHANNEL 250V - 0.9 - 6ATO-220MESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP6NS25 250 V

STP6NK90Z - STP6NK90ZFPSTB6NK90Z - STW7NK90ZN-channel 900V - 1.56 - 5.8A - TO-220/TO-220FP/D2PAK/TO-247Zener-protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) IDSTP6NK90Z 900 V

STB6NK90ZT4, STP6NK90Z STP6NK90ZFP, STW7NK90ZDatasheetN-channel 900 V, 1.56 typ., 5.8 A SuperMESH Power MOSFET in D2PAK, TO-220, TO-220FP and TO-247 packagesFeaturesTABTAB3Order codes VDS RDS(on)max. ID123D PAKTO-220 21 STB6NK90ZT4STP6NK90Z900 V 2 5.8 ASTP6NK90ZFP32 STW7NK90Z312TO-220FPTO-2471 Extremely high dv/dt capability

STP6NA60STP6NA60FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP6NA60 600 V

STP6NK90Z - STP6NK90ZFPSTB6NK90ZN-CHANNEL 900V - 1.56 - 5.8A TO-220/TO-220FP/D2PAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP6NK90Z 900 V

STP6NK90Z - STP6NK90ZFPSTB6NK90Z - STW7NK90ZN-channel 900V - 1.56 - 5.8A - TO-220/TO-220FP/D2PAK/TO-247Zener-protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) IDSTP6NK90Z 900 V

STP6NK70ZSTF6NK70Z - STW6NK70ZN-channel 700V - 1.5 - 5A - TO-220/TO-220FPZener-protected SuperMESH Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP6NK70Z 700 V

STP6NA80STP6NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP6NA80 800 V

STP6NC60 - STP6NC60FPSTB6NC60-1N-CHANNEL 600V - 1 - 6A TO-220/TO-220FP/I2PAKPowerMESHII MOSFETTYPE VDSS RDS(on) IDSTP(B)6NC60(-1) 600 V

STD6N62K3 - STF6N62K3STP6N62K3 - STU6N62K3N-channel 620 V, 1.1 , 5.5 A, IPAK, DPAK, TO-220,TO-220FPSuperMESH3 Power MOSFETFeatures3RDS(on) 3Type VDSS ID Pw2 1max1DPAKSTD6N62K3 620 V

STP6NB90STP6NB90FPN - CHANNEL 900V - 1.7 - 5.8A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP6NB90 900 V

STD6N95K5, STP6N95K5, STW6N95K5, STU6N95K5N-channel 950 V, 1 typ., 9 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220, TO-247 and IPAK packagesDatasheet - production dataFeatures TABTAB3 Order codes VDS RDS(on) max. ID PTOT13DPAK STD6N95K521STP6N95K5TO-220950 V 1.25 9 A 90 W STW6N95K5TABSTU6N95K53 DPAK 950 V worldwide best RDS(on)

STP6NB50STP6NB50FPN - CHANNEL ENHANCEMENT MODEPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP6NB50 500 V

STx6NM60NN-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max33STB6NM60N 650 V

STP6N90K5 N-channel 900 V, 0.91 typ., 6 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) DTABSTP6N90K5 900 V 1.10 6 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) 32 Ultra-low gate charge 1 100% avalanche tested TO-220 Zener-protected App

STD6N62K3, STF6N62K3STI6N62K3, STP6N62K3, STU6N62K3N-channel 620 V, 0.95 , 5.5 A SuperMESH3 Power MOSFETin IPAK, DPAK, TO-220,TO-220FP, IPAKFeaturesRDS(on) 3Order codes VDSS ID Pw2max.1321IPAKSTD6N62K3 90 WIPAKSTF6N62K3 30 W3STI6N62K3 620 V

STP6NB90STP6NB90FPN - CHANNEL 900V - 1.7 - 5.8A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP6NB90 900 V

STFW6N120K3, STP6N120K3,STW6N120K3N-channel 1200 V, 1.95 typ., 6 A SuperMESH3 Power MOSFET in TO-3PF, TO-220 and TO-247 packagesDatasheet production dataFeaturesRDS(on) Order codes VDSS max ID Ptot321STFW6N120K3 1200 V

STB6NK60Z - STB6NK60Z-1STP6NK60ZFP - STP6NK60ZN-channel 600 V - 1 - 6 A - TO-220/TO-220FP/D2PAK/I2PAKZener-Protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) ID PWSTB6NK60Z 600 V

STP6NC90Z - STP6NC90ZFPSTB6NC90Z - STB6NC90Z-1N-CHANNEL 900V - 1.55 - 5.4A TO-220/FP/DPAK/IPAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP6NC90Z 900 V

STP6NC80Z - STP6NC80ZFPSTB6NC80Z - STB6NC80Z-1N-CHANNEL 800V - 1.5 - 5.4A TO-220/FP/DPAK/IPAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP6NC80Z/FP 800V

STP6NK50Z - STF6NK50ZSTD6NK50ZN-CHANNEL 500V - 0.93 - 5.6A TO-220/TO-220FP/DPAKZener-Protected SuperMESH MOSFETTYPE VDSS RDS(on) ID PwSTP6NK50Z 500 V

STB6N80K5, STD6N80K5,STI6N80K5, STP6N80K5N-channel 800 V, 1.3 typ., 4.5 A MDmesh K5Power MOSFETs in DPAK, DPAK, IPAK and TO-220 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS RDS(on)max ID PTOT3131STB6N80K5DPAKD2PAKSTD6N80K5TAB TAB800 V 1.6 4.5 A 85 WSTI6N80K5STP6N80K5323211 Industrys lowest RDS(on)TO-

STP6N60FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP6N60FI 600 V

STP6NK70ZSTF6NK70Z - STW6NK70ZN-channel 700V - 1.5 - 5A - TO-220/TO-220FPZener-protected SuperMESH Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP6NK70Z 700 V

STP6NC60 - STP6NC60FPSTB6NC60-1N-CHANNEL 600V - 1 - 6A TO-220/TO-220FP/I2PAKPowerMESHII MOSFETTYPE VDSS RDS(on) IDSTP(B)6NC60(-1) 600 V

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP6NK60ZDESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications in switchingpower supplies and

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP6NK90ZFEATURESTypical R (on)=1.56DSWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIdeal for off-line powersupplies adaptors and PFCLightingHigh currenthigh speed switchingAB

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP6N80K5FEATURESStatic drain-source on-resistance:RDS(on) 1.6Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applications

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP6NK90ZFPFEATURESTypical R (on)=1.56DSWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIdeal for off-line powersupplies adaptors and PFCLightingHigh currenthigh speed switching