STP6N95K5 Todos los transistores

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STP6N95K5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STP6N95K5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 90 W

Tensión drenaje-fuente (Vds): 950 V

Tensión compuerta-fuente (Vgs): 30 V

Tensión umbral compuerta-fuente Vgs(th): 5 V

Corriente continua de drenaje (Id): 9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 1.25 Ohm

Empaquetado / Estuche: TO220

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STP6N95K5 Datasheet (PDF)

5.1. stp6nk50z stf6nk50z std6nk50z.pdf Size:399K _st

STP6N95K5
STP6N95K5

STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93? - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET TYPE VDSS RDS(on) ID Pw STP6NK50Z 500 V <1.2? 5.6 A 90 W STF6NK50Z 500 V <1.2? 5.6 A 25 W STD6NK50Z 500 V <1.2? 5.6 A 90 W TYPICAL RDS(on) = 0.93 ? 3 EXTREMELY HIGH dv/dt CAPABILITY 2 1 100% AVALANCHE TESTED GATE CHARGE MINIMIZED TO-220 TO-220FP VERY LOW INTRINS

5.2. stp6nc80z.pdf Size:511K _st

STP6N95K5
STP6N95K5

STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5? - 5.4A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESHIII MOSFET TYPE VDSS RDS(on) ID STP6NC80Z/FP 800V < 1.8 ? 5.4 A STB6NC80Z/-1 800V < 1.8 ? 5.4 A 3 1 TYPICAL RDS(on) = 1.5 ? 3 2 D?PAK 1 EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES TO-220 TO-220FP 100% AVALANCHE TESTED VERY LOW GATE I

5.3. stp6na80.pdf Size:390K _st

STP6N95K5
STP6N95K5

STP6NA80 STP6NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6NA80 800 V < 1.9 ? 5.7 A STP6NA80FI 800 V < 1.9 ? 3.4 A TYPICAL R = 1.68 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO

5.4. stp6na60-fi.pdf Size:384K _st

STP6N95K5
STP6N95K5

STP6NA60 STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6NA60 600 V < 1.2 ? 6.5 A STP6NA60FI 600 V < 1.2 ? 3.9 A TYPICAL R = 1 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-22

5.5. stp6nb80.pdf Size:365K _st

STP6N95K5
STP6N95K5

STP6NB80 STP6NB80FP N-CHANNEL 800V - 1.6? - 5.7A TO-220/TO-220FP PowerMesh MOSFET TYPE VDSS RDS(on) ID STP6NB80 800 V < 1.9 ? 5.7 A STP6NB80FP 800 V < 1.9 ? 5.7 A TYPICAL RDS(on) = 1.6 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 2 2 VERY LOW INTRINSIC CAPACITANCES 1 1 TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelect

5.6. stp6na60.pdf Size:377K _st

STP6N95K5
STP6N95K5

STP6NA60 STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6NA60 600 V < 1.2 ? 6.5 A STP6NA60FI 600 V < 1.2 ? 3.9 A TYPICAL R = 1 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-22

5.7. stp6ns25.pdf Size:266K _st

STP6N95K5
STP6N95K5

STP6NS25 N-CHANNEL 250V - 0.9? - 6ATO-220 MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID STP6NS25 250 V < 1.1 ? 6 A TYPICAL RDS(on) = 0.9 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY TO-220 process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performance. The new patent

5.8. stp6n25-.pdf Size:193K _st

STP6N95K5
STP6N95K5

STP6N25 STP6N25FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V R I DSS DS(on) D STP6N25 250 V < 1 ? 6 A STP6N25FI 250 V < 1 ? 4 A TYPICAL R = 0.7 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 2 2 APPLICATION ORIENTED 1 1 CHARACTERIZATION APPLICATIONS TO-220 ISOWATT220 HIGH SPEED SWITCHING

5.9. stp6nc60-fp--1.pdf Size:364K _st

STP6N95K5
STP6N95K5

STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1? - 6A TO-220/TO-220FP/I2PAK PowerMESHII MOSFET TYPE VDSS RDS(on) ID STP(B)6NC60(-1) 600 V < 1.2 ? 6 A STP6NC60FP 600 V < 1.2 ? 6 A TYPICAL RDS(on) = 1.0 ? 3 2 EXTREMELY HIGH dv/dt CAPABILITY 1 100% AVALANCHE TESTED TO-220 TO-220FP NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION I2PAK The PowerMESHII i

5.10. stp6nb90(fp).pdf Size:333K _st

STP6N95K5
STP6N95K5

STP6NB90 STP6NB90FP N - CHANNEL 900V - 1.7? - 5.8A - TO-220/TO-220FP PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP6NB90 900 V <2 ? 5.8 A STP6NB90FP 900 V <2 ? 5.8 A TYPICAL R = 1.7 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process,

5.11. stp6nb90-fp.pdf Size:340K _st

STP6N95K5
STP6N95K5

STP6NB90 STP6NB90FP N - CHANNEL 900V - 1.7? - 5.8A - TO-220/TO-220FP PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP6NB90 900 V <2 ? 5.8 A STP6NB90FP 900 V <2 ? 5.8 A TYPICAL R = 1.7 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process,

5.12. stp6nk90z stp6nk90zfp stb6nk90z stw7nk90z.pdf Size:481K _st

STP6N95K5
STP6N95K5

STP6NK90Z - STP6NK90ZFP STB6NK90Z - STW7NK90Z N-channel 900V - 1.56? - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS(on) ID STP6NK90Z 900 V < 2 ? 5.8 A 3 STP6NK90ZFP 900 V < 2 ? 5.8 A 2 1 STB6NK90Z 900 V < 2 ? 5.8 A TO-220FP TO-220 STW7NK90Z 900 V < 2 ? 5.8 A Extremely high dv/dt capability 100% avalanche tested 3 Gate ch

5.13. std6n62k3 stf6n62k3 stp6n62k3 stu6n62k3.pdf Size:427K _st

STP6N95K5
STP6N95K5

STD6N62K3 - STF6N62K3 STP6N62K3 - STU6N62K3 N-channel 620 V, 1.1 ?, 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3 Power MOSFET Features 3 RDS(on) 3 Type VDSS ID Pw 2 1 max 1 DPAK STD6N62K3 620 V < 1.28 ? 5.5 A 90 W IPAK STF6N62K3 620 V < 1.28 ? 5.5 A(1) 25 W STP6N62K3 620 V < 1.28 ? 5.5 A 90 W STU6N62K3 620 V < 1.28 ? 5.5 A 90 W 1. Limited by package 3 3 2 2 1 100% avala

5.14. stb6nk60z stb6nk60z-1 stp6nk60zfp stp6nk60z.pdf Size:448K _st

STP6N95K5
STP6N95K5

STB6NK60Z - STB6NK60Z-1 STP6NK60ZFP - STP6NK60Z N-channel 600 V - 1 ? - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH Power MOSFET Features Type VDSS RDS(on) ID PW STB6NK60Z 600 V < 1.2 ? 6 A 110 W 3 3 2 1 1 STB6NK60Z-1 600 V < 1.2 ? 6 A 110 W D?PAK TO-220 STP6NK60ZFP 600 V < 1.2 ? 6 A 30 W STP6NK60Z 600 V < 1.2 ? 6 A 110 W Extremely high dv/dt capability 3 10

5.15. stp6n60f.pdf Size:151K _st

STP6N95K5
STP6N95K5

STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP6N60FI 600 V < 1.2 ? 3.8 A TYPICAL RDS(on) = 1 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED 3 CHARACTERIZATION 2 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ISOWATT220 SWITCH MODE POWER SUPPLIES (SMPS) CHOPPER REGULATO

5.16. stp6nk70z stf6nk70z stw6nk70z.pdf Size:421K _st

STP6N95K5
STP6N95K5

STP6NK70Z STF6NK70Z - STW6NK70Z N-channel 700V - 1.5? - 5A - TO-220/TO-220FP Zener-protected SuperMESH Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) STP6NK70Z 700 V < 1.8 ? 5 A STF6NK70Z 700 V <1.8 ? 5 A(1) TO-220 TO-247 STW6NK70Z 700 V < 1.8 ? 5 A 1. Limited only by maximum temperature allowed Extremely high dv/dt capability 3 2 1 Improved esd capability TO-22

5.17. stp6n60fi.pdf Size:316K _st

STP6N95K5
STP6N95K5

STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6N60FI 600 V < 1.2 ? 3.8 A TYPICAL R = 1 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED 3 CHARACTERIZATION 2 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ISOWATT220 SWITCH MODE POWER SUPPLIES (SMPS) CHOPPER REGULATO

5.18. stp6nc90z.pdf Size:532K _st

STP6N95K5
STP6N95K5

STP6NC90Z - STP6NC90ZFP STB6NC90Z - STB6NC90Z-1 N-CHANNEL 900V - 1.55? - 5.4A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESHIII MOSFET TYPE VDSS RDS(on) ID STP6NC90Z 900 V < 1.9 ? 5.4 A STP6NC90ZFP 900 V < 1.9 ? 5.4 A 3 STB6NC90Z 900 V < 1.9 ? 5.4 A 1 STB6NC90Z-1 900 V < 1.9 ? 5.4 A 3 D?PAK 2 TYPICAL RDS(on) = 1.55? 1 TO-220 TO-220FP EXTREMELY HIGH dv/dt AND CAPABILITY GATE

5.19. stb6n52k3 std6n52k3 stf6n52k3 stp6n52k3.pdf Size:1153K _st

STP6N95K5
STP6N95K5

STB6N52K3, STD6N52K3 STF6N52K3, STP6N52K3 N-channel 525 V, 1 ?, 5 A, D?PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET Features RDS(on) 3 Order codes VDSS ID Pw max 1 3 2 STB6N52K3 5 A 70 W DPAK 1 STD6N52K3 5 A(1) 25 W TO-220FP 525 V < 1.2 ? STF6N52K3 5 A 70 W STP6N52K3 1. Limited by package 3 3 100% avalanche tested 2 1 1 D?PAK TO-220 Extremely high dv/dt cap

5.20. stb6nm60n std6nm60n stf6nm60n stp6nm60n.pdf Size:685K _st

STP6N95K5
STP6N95K5

STx6NM60N N-channel 600 V, 0.85 ?, 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 STB6NM60N 650 V < 0.92 ? 4.6 A 2 2 1 1 STD6NM60N 650 V < 0.92 ? 4.6 A TO-220 TO-220FP STD6NM60N-1 650 V < 0.92 ? 4.6 A 3 1 STF6NM60N 650 V < 0.92 ? 4.6 A (1) D?PAK STP6NM60N 650 V < 0.92 ? 4.6 A 3 3 1 2 1 1. Limited only by

5.21. stp6na60fp.pdf Size:96K _st

STP6N95K5
STP6N95K5

STP6NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STP6NA60FP 600 V < 1.2 ? 3.9 A TYPICAL R = 1 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 REDUCED THRESHOLD VOLTAGE SPREAD 2 1 DESCRIPTION This series of POWER M

5.22. stp6nk60z.pdf Size:578K _st

STP6N95K5
STP6N95K5

STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1? - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESHPower MOSFET TYPE VDSS RDS(on) ID Pw STP6NK60Z 600 V < 1.2 ? 6 A 110 W STP6NK60ZFP 600 V < 1.2 ? 6 A 32 W STB6NK60Z 600 V < 1.2 ? 6 A 110 W STB6NK60Z-1 600 V < 1.2 ? 6 A 110 W 3 3 1 TYPICAL RDS(on) = 1 ? 2 1 EXTREMELY HIGH dv/dt CAPABILITY D2PAK TO-220 TO

5.23. stp6nb25.pdf Size:322K _st

STP6N95K5
STP6N95K5

STP6NB25 STP6NB25FP N-CHANNEL 250V - 0.9? - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE VDSS RDS(on) ID STP6NB25 250 V < 1.1 ? 5 A STP6NB25FP 250 V < 1.1 ? 5 A TYPICAL RDS(on) = 0.9 ? EXTREMELY HIGH dv/dt CAPABILITY 3 100% AVALANCHE TESTED 3 2 2 1 VERY LOW INTRINSIC CAPACITANCES 1 GATE CHARGE MINIMIZED TO-220FP TO-220 DESCRIPTION Using the latest high voltage MESH OVERLAY

5.24. stp6nk90z.pdf Size:588K _st

STP6N95K5
STP6N95K5

STP6NK90Z - STP6NK90ZFP STB6NK90Z N-CHANNEL 900V - 1.56? - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESHPower MOSFET TYPE VDSS RDS(on) ID Pw STP6NK90Z 900 V <2? 5.8 A 140 W STP6NK90ZFP 900 V <2? 5.8 A 30 W STB6NK90Z 900 V <2? 5.8 A 140 W TYPICAL RDS(on) = 1.56 ? 3 2 EXTREMELY HIGH dv/dt CAPABILITY 1 100% AVALANCHE TESTED GATE CHARGE MINIMIZED TO-220 TO-220FP VERY LOW I

5.25. stp6n25.pdf Size:373K _st

STP6N95K5
STP6N95K5

STP6N25 STP6N25FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE VDSS RDS(on) ID STP6N25 250 V < 1 ? 6 A STP6N25FI 250 V < 1 ? 4 A TYPICAL R = 0.7 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 2 2 APPLICATION ORIENTED 1 1 CHARACTERIZATION APPLICATIONS TO-220 ISOWATT220 HIGH SPEED SWITCHING U

5.26. sti6n62k3 stp6n62k3 stu6n62k3 stf6n62k3 std6n62k3.pdf Size:1146K _st

STP6N95K5
STP6N95K5

STD6N62K3, STF6N62K3 STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 ?, 5.5 A SuperMESH3 Power MOSFET in IPAK, DPAK, TO-220,TO-220FP, I?PAK Features RDS(on) 3 Order codes VDSS ID Pw 2 max. 1 3 2 1 IPAK STD6N62K3 90 W I?PAK STF6N62K3 30 W 3 STI6N62K3 620 V < 1.2 ? 5.5 A 90 W 1 STP6N62K3 90 W DPAK STU6N62K3 90 W 100% avalanche tested 3 3 2 1 2 1 Extremely hig

5.27. stb6nc80z stp6nc80z.pdf Size:532K _st

STP6N95K5
STP6N95K5

STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5? - 5.4A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESHIII MOSFET TYPE VDSS RDS(on) ID STP6NC80Z/FP 800V < 1.8 ? 5.4 A STB6NC80Z/-1 800V < 1.8 ? 5.4 A 3 1 TYPICAL RDS(on) = 1.5 ? 3 2 D?PAK 1 EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES TO-220 TO-220FP 100% AVALANCHE TESTED VERY LOW GATE I

5.28. stp6nb50.pdf Size:326K _st

STP6N95K5
STP6N95K5

STP6NB50 STP6NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP6NB50 500 V < 1.5 ? 5.8 A STP6NB50FP 500 V < 1.5 ? 3.4 A TYPICAL R = 1.35 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, SGS-Thomson ha

Otros transistores... STP60NF06L , STP60NF10 , STP60NS04ZB , STP62NS04Z , STP65NF06 , STP6N120K3 , STP6N52K3 , STP6N62K3 , 2N5485 , STP6NK50Z , STP6NK60Z , STP6NK90Z , STP70N10F4 , STP70NF03L , STP70NS04ZC , STP75N3LLH6 , STP75NF20 .

 


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