APT30M40LVFR Todos los transistores

 

APT30M40LVFR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT30M40LVFR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 520 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 76 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 1500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO264
     - Selección de transistores por parámetros

 

APT30M40LVFR Datasheet (PDF)

 ..1. Size:66K  apt
 apt30m40lvfr.pdf pdf_icon

APT30M40LVFR

APT30M40LVFR300V 76A 0.040POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te

 6.1. Size:116K  apt
 apt30m40b2vfrg.pdf pdf_icon

APT30M40LVFR

APT30M40B2VFRAPT30M40LVFR300V 76A 0.040B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout

 6.2. Size:116K  apt
 apt30m40b2vr.pdf pdf_icon

APT30M40LVFR

APT30M40B2VRAPT30M40LVR300V 76A 0.040WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout..LVR Faster Switching

 6.3. Size:70K  apt
 apt30m40jvr.pdf pdf_icon

APT30M40LVFR

APT30M40JVR300V 70A 0.040POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalanc

MOSTRAR MÁS

Otros transistores... APT20M45BVFR , APT20M45BVR , APT20M45SVFR , APT20M45SVR , APT30M19JVFR , APT30M19JVR , APT30M40JVFR , APT30M40JVR , IRF640 , APT30M40LVR , APT30M70BVFR , APT30M70BVR , APT30M85BVFR , APT30M85BVR , APT30M90AVR , APT4012BVR , APT4014BVR .

History: AP6618GM-HF | MTN50N06E3 | SSFT4004 | FDD3N50NZ | CPC3730 | IPI051N15N5 | SM3116NAF

 

 
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