STP75NS04Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STP75NS04Z
   Código: P75NS04Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 33 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 50 nC
   trⓘ - Tiempo de subida: 248 nS
   Cossⓘ - Capacitancia de salida: 628 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET STP75NS04Z

STP75NS04Z Datasheet (PDF)

..1. Size:233K st
stp75ns04z.pdf

STP75NS04ZN-channel Clamped - 7m - 80A - TO-220Fully protected MESH Overlay III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP75NS04Z Clamped

8.1. Size:426K st
stb75nf75 stp75nf75 stp75nf75fp.pdf

STB75NF75STP75NF75 - STP75NF75FPN-channel 75V - 0.0095 - 80A - TO-220 - TO-220FP - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB75NF75 75V

8.2. Size:517K st
stb75n20 stp75n20 stw75n20.pdf

STB75N20STP75N20 - STW75N20N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB75N20 200V

8.3. Size:382K st
stp75nf75l.pdf

STP75NF75LSTB75NF75L STB75NF75L-1N-CHANNEL 75V - 0.009 - 75A D2PAK/I2PAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB75NF75L/-1 75 V

8.4. Size:423K st
stb75nf75t4 stp75nf75fp.pdf

STB75NF75STP75NF75 - STP75NF75FPN-channel 75V - 0.0095 - 80A - TO-220 - TO-220FP - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB75NF75 75V

8.5. Size:1110K st
std75n3llh6 stp75n3llh6 stu75n3llh6 stu75n3llh6-s.pdf

STD75N3LLH6, STP75N3LLH6STU75N3LLH6, STU75N3LLH6-SN-channel 30 V, 0.0042 , 75 A, DPAK, TO-220, IPAK, Short IPAKSTripFET VI DeepGATE Power MOSFETFeaturesTABTABOrder codes VDSS RDS(on) max ID31STD75N3LLH6

8.6. Size:479K st
stp75n75f4.pdf

STP75N75F4N-channel 75 V, 0.0092 typ., 78 A STripFET DeepGATEPower MOSFET in a TO-220 packageDatasheet production dataFeaturesTABType VDSS RDS(on) max IDSTP75N75F4 75 V

8.7. Size:514K st
stb75nf20 stp75nf20 stw75nf20.pdf

STB75NF20STP75NF20 - STW75NF20N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB75NF20 200V

8.8. Size:351K st
stp75ne75.pdf

STP75NE75STP75NE75FPN - CHANNEL 75V - 0.01 - 75A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP75NE75 75 V

8.9. Size:435K st
stp75nf68.pdf

STP75NF68N-channel 68 V, 0.010 , 80 A, TO-220STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP75NF68 68 V

8.10. Size:201K inchange semiconductor
stp75nf75fp.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP75NF75FPFEATURESExcellent switching performanceWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dra

8.11. Size:236K inchange semiconductor
stp75nf75.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP75NF75FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 0.011(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONSuitable as primary switch in advanced hi

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