STP7N95K3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STP7N95K3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 950 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 79 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.35 Ohm
   Paquete / Cubierta: TO220

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STP7N95K3 Datasheet (PDF)

..1. Size:939K st
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STF7N95K3STP7N95K3, STW7N95K3N-channel 950 V, 1.1 , 7.2 A, TO-220, TO-220FP, TO-247Zener-protected SuperMESH3 Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax3STF7N95K3 950 V

9.1. Size:876K st
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STP7N65M2, STU7N65M2 N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features TABR DS(on)Order code VDS ID max STP7N65M2 650 V 1.15 5 A 32 STU7N65M2 650 V 1.15 5 A TAB1TO-220 Extremely low gate charge 32 Excellent output capacitance (Coss) profile IPAK 1 100% avalanche

9.2. Size:276K st
stp7nb60.pdf pdf_icon

STP7NB60STP7NB60FPN-CHANNEL 600V - 1.0 - 7.2A TO-220/TO-220FPPowerMESH MOSFETTable 1. General Features Figure 1. PackageType VDSS RDS(on) IDSTP7NB60 600 V

9.3. Size:924K st
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STD7N52DK3STF7N52DK3, STP7N52DK3N-channel 525 V, 0.95 , 6 A, DPAK, TO-220FP, TO-220SuperFREDmesh3 Power MOSFETFeaturesRDS(on) Order codes VDSS max. ID Pw31STD7N52DK3 6 A 90 WDPAKSTF7N52DK3 525 V

9.4. Size:1194K st
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STB7N52K3, STD7N52K3STF7N52K3, STP7N52K3N-channel 525 V, 0.84 , 6.2 A, D2PAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax 3311STB7N52K3 525 V

9.5. Size:1317K st
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STB7N52K3, STD7N52K3STF7N52K3, STP7N52K3N-channel 525 V, 0.72 , 6 A, DPAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) Order codes VDSS ID Pwmax. 3311STB7N52K3 90 WDPAKDPAKSTD7N52K3 90 W525 V

9.6. Size:882K st
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9.7. Size:937K st
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9.8. Size:301K st
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9.9. Size:337K st
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STP7NB80STP7NB80FPN - CHANNEL 800V - 1.2 - 6.5A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP7NB80 800 V

9.10. Size:605K st
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STP7NK40Z - STP7NK40ZFPSTD7NK40Z - STD7NK40Z-1N-CHANNEL 400V-0.85-5.4A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP7NK40Z 400 V

9.11. Size:725K st
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9.12. Size:50K st
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9.13. Size:606K st
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9.14. Size:334K st
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STP7NB40STP7NB40FPN - CHANNEL ENHANCEMENT MODEPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP7NB40 400 V

9.15. Size:935K st
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STB7NK80Z, STB7NK80Z-1STP7NK80ZFP, STP7NK80ZN-channel 800 V, 1.5 , 5.2 A, TO-220,TO-220FP,D2PAK,I2PAKZener-protected SuperMESH Power MOSFETFeaturesVDSS Type RDS(on) ID(@Tjmax)STP7NK80Z 800V

9.16. Size:431K st
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9.17. Size:969K st
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STD7NM80, STD7NM80-1STF7NM80, STP7NM80N-channel 800 V, 0.95 , 6.5 A TO-220, TO-220FP, IPAK, DPAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) IDSTD7NM80 800 V

9.18. Size:244K st
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9.19. Size:50K st
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9.20. Size:424K st
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9.21. Size:408K st
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STP7NA40STP7NA40FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP7NA40 400 V

9.22. Size:330K st
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STD7N52K3, STP7N52K3DatasheetN-channel 525 V, 0.72 typ., 6 A, MDmesh K3 Power MOSFETs in DPAK and TO-220 packagesFeaturesVDS RDS(on) max. ID PTOTOrder codesTABTABSTD7N52K3525 V 0.85 6 A 90 W32STP7N52K3132 100% avalanche testedDPAK TO-2201 Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recover

9.24. Size:395K st
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STP7NA60STP7NA60FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP7NA60 600 V

9.25. Size:426K st
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STD7NM50N - STD7NM50N-1STF7NM50N - STP7NM50NN-channel 500V - 0.70 - 5A - TO-220 - TO-220FP - IPAK - DPAKSecond generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)213STD7NM50N 550V

9.26. Size:542K st
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STP7NC80Z - STP7NC80ZFPSTB7NC80Z - STB7NC80Z-1N-CHANNEL 800V - 1.3 - 6.5A TO-220/FP/D2PAK/I2PAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP7NC80Z 800 V

9.27. Size:971K st
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9.28. Size:995K st
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STD7N80K5, STP7N80K5, STU7N80K5N-channel 800 V, 0.95 typ., 6 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeatures TABOrder codes VDS RDS(on)max ID PTOT2 31STD7N80K5DPAKSTP7N80K5 800 V 1.2 6 A 110 WTABSTU7N80K5TAB Worldwide best FOM (figure of merit)3 Ultra low gate charge2312

9.29. Size:634K st
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STD7NK40ZT4, STP7NK40Z, STP7NK40ZFPDatasheetN-channel 400 V, 0.85 typ., 5.4 A, SuperMESH Power MOSFETs in DPAK, TO-220 and TO-220FP packagesFeaturesTAB32VDS RDS(on) max. ID PTOTOrder code1DPAKSTD7NK40ZT4 70 WTABSTP7NK40Z 400 V 1 5.4 A 70 WSTP7NK40ZFP 25 W33 22 11TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche testedD(2,

9.30. Size:529K st
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9.31. Size:1199K st
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STD7N60M2, STP7N60M2, STU7N60M2N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID3TJmax max1STD7N60M2DPAKSTP7N60M2 650 V 0.95 5 ATABSTU7N60M2TAB Extremely low gate charge332 Lower RDS(on) x area vs previous generation21

9.32. Size:1031K st
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STP7N105K5, STU7N105K5, STW7N105K5N-channel 1050 V, 1.4 typ., 4 A Zener-protected SuperMESH 5Power MOSFETs in TO-220, IPAK and TO-247 packagesDatasheet - preliminary dataFeatures TABOrder codes VDS RDS(on) max. ID PTOTSTP7N105K5321STU7N105K5 1050 V 2 4 A 110 W 32TO-2201 STW7N105K5TO-247TAB IPAK 1050 V worldwide best RDS(on) Worldwide best F

Otros transistores... STP75NF20 , STP75NF68 , STP75NF75 , STP75NS04Z , STP76NF75 , STP78N75F4 , STP7N52DK3 , STP7N52K3 , IRF840 , STP7NK30Z , STP7NK40Z , STP7NK80Z , STP7NK80ZFP , STP7NM60N , STP7NM80 , STP80N20M5 , STP80N70F4 .