APT4014HVR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT4014HVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 690 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm

Encapsulados: TO258

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APT4014HVR datasheet

 ..1. Size:64K  apt
 apt4014hvr.pdf pdf_icon

APT4014HVR

APT4014HVR 400V 28A 0.140 POWER MOS V TO-258 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 7.1. Size:64K  apt
 apt4014bvr.pdf pdf_icon

APT4014HVR

APT4014BVR 400V 28A 0.140 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 7.2. Size:72K  apt
 apt4014bvfrg apt4014svfrg.pdf pdf_icon

APT4014HVR

APT4014BVFR APT4014SVFR 400V 28A 0.140 BVFR FREDFET POWER MOS V D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, SVFR increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 7.3. Size:375K  inchange semiconductor
 apt4014bvfr.pdf pdf_icon

APT4014HVR

isc N-Channel MOSFET Transistor APT4014BVFR FEATURES Drain Current I = 28A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R =0.14 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

MOSTRAR MÁS

Otros transistores... APT30M40LVR, APT30M70BVFR, APT30M70BVR, APT30M85BVFR, APT30M85BVR, APT30M90AVR, APT4012BVR, APT4014BVR, IRF3710, APT4015AVR, APT4016BN, APT4016BVR, APT4018HVR, APT4020BN, APT4020BVR, APT4030CNR, APT40M35JVR