APT4020BN Todos los transistores

 

APT4020BN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT4020BN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 310 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 26 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Qgⓘ - Carga de la puerta: 94 nC
   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 563 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO247

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APT4020BN Datasheet (PDF)

 ..1. Size:51K  apt
apt4020bn.pdf

APT4020BN
APT4020BN

DTO-247GAPT4020BN 400V 26.0A 0.20SAPT4025BN 400V 23.0A 0.25POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 4020BN 4025BN UNITVDSS Drain-Source Voltage400 400 VoltsID Continuous Drain Current @ TC = 25C26 23AmpsIDM Pulsed Drain Current 1104 92

 6.1. Size:72K  apt
apt4020bvfrg.pdf

APT4020BN
APT4020BN

400V 23A 0.20APT4020BVFR APT4020SVFRAPT4020BVFRG* APT4020SVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.BVFRFREDFETPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVF

 6.2. Size:64K  apt
apt4020bvr.pdf

APT4020BN
APT4020BN

APT4020BVR400V 23A 0.200POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 6.3. Size:375K  inchange semiconductor
apt4020bvfr.pdf

APT4020BN
APT4020BN

isc N-Channel MOSFET Transistor APT4020BVFRFEATURESDrain Current I =23A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Otros transistores... APT30M90AVR , APT4012BVR , APT4014BVR , APT4014HVR , APT4015AVR , APT4016BN , APT4016BVR , APT4018HVR , 2SK3878 , APT4020BVR , APT4030CNR , APT40M35JVR , APT40M35PVR , APT40M42JN , APT40M70JVR , APT40M70LVR , APT40M75JN .

 

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
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