STW30N65M5 Todos los transistores

 

STW30N65M5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STW30N65M5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 68 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.139 Ohm
   Paquete / Cubierta: TO247

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STW30N65M5 Datasheet (PDF)

 ..1. Size:1205K  st
stb30n65m5 stf30n65m5 sti30n65m5 stp30n65m5 stw30n65m5.pdf

STW30N65M5
STW30N65M5

STB30N65M5, STF30N65M5, STI30N65M5STP30N65M5, STW30N65M5N-channel 650 V, 0.125 , 22 A, MDmesh V Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB30N65M5 710 V

 ..2. Size:273K  inchange semiconductor
stw30n65m5.pdf

STW30N65M5
STW30N65M5

isc N-Channel MOSFET Transistor STW30N65M5FEATURESStatic Drain-Source On-Resistance: R = 0.139(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 8.1. Size:311K  st
stw30n20.pdf

STW30N65M5
STW30N65M5

STP30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W Gate charge minimized 3 32 21 1 100% avalanche testedTO-220TO-247 Excellent figure of merit (RDS*Qg) Very good manufactuing repeability Ver

 8.2. Size:770K  st
stb30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf

STW30N65M5
STW30N65M5

STB30NM60N,STI30NM60N,STF30NM60NSTP30NM60N, STW30NM60NN-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFETTO-220, TO-220FP, TO-247, D2PAK, I2PAKFeaturesRDS(on) VDSS @ Type ID PWTJmaxmax33121STB30NM60N 650 V

 8.3. Size:309K  st
stp30nf20 stw30nf20.pdf

STW30N65M5
STW30N65M5

STP30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W Gate charge minimized 3 32 21 1 100% avalanche testedTO-220TO-247 Excellent figure of merit (RDS*Qg) Very good manufactuing repeability Ver

 8.4. Size:386K  st
stp30nf20 stb30nf20 stw30nf20.pdf

STW30N65M5
STW30N65M5

STP30NF20 - STB30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAKLow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W3322STB30NF20 200V 0.075 30A 125W11TO-2473 Gate charge minimized TO-2201 100% avalanche testedDPAK Excellent figure of me

 8.5. Size:618K  st
stb30nm50n sti30nm50n stf30nm50n stp30nm50n stw30nm50n.pdf

STW30N65M5
STW30N65M5

STB30NM50N,STI30NM50N,STF30NM50NSTP30NM50N, STW30NM50NN-channel 500 V, 0.090 , 27 A MDmesh II Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesRDS(on) VDSS Type ID(@Tjmax)max33121STB30NM50N 550 V

 8.6. Size:766K  st
stb30nm60n sti30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf

STW30N65M5
STW30N65M5

STB30NM60N,STI30NM60N,STF30NM60NSTP30NM60N, STW30NM60NN-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFETTO-220, TO-220FP, TO-247, D2PAK, I2PAKFeaturesRDS(on) VDSS @ Type ID PWTJmaxmax33121STB30NM60N 650 V

 8.7. Size:267K  st
stw30nm60d.pdf

STW30N65M5
STW30N65M5

STW30NM60DN-channel 600V - 0.125 - 30A - TO-247Fast diode MDmesh Power MOSFETGeneral featuresType VDSS RDS(on) IDSTW30NM60D 600V

 8.8. Size:792K  st
stw30nm60nd stp30nm60nd stf30nm60nd sti30nm60nd stb30nm60nd.pdf

STW30N65M5
STW30N65M5

STx30NM60NDN-channel 600 V, 0.11 , 25 A FDmesh II Power MOSFET(with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247FeaturesVDSS @TJ RDS(on) Type IDmax max3322 2STB30NM60ND 25 AI PAK11TO-247STI30NM60ND 25 ASTF30NM60ND 650 V 0.13 25 A(1)3STP30NM60ND 25 A12D PAKSTW30NM60ND 25 A1. Limited only by maximum temperature allowed32 3 T

 8.9. Size:789K  st
stf30nm60nd stp30nm60nd stw30nm60nd.pdf

STW30N65M5
STW30N65M5

STx30NM60NDN-channel 600 V, 0.11 , 25 A FDmesh II Power MOSFET(with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247FeaturesVDSS @TJ RDS(on) Type IDmax max3322 2STB30NM60ND 25 AI PAK11TO-247STI30NM60ND 25 ASTF30NM60ND 650 V 0.13 25 A(1)3STP30NM60ND 25 A12D PAKSTW30NM60ND 25 A1. Limited only by maximum temperature allowed32 3 T

 8.10. Size:393K  st
stp30nf20 stw30nf20 stb30nf20.pdf

STW30N65M5
STW30N65M5

STP30NF20 - STB30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAKLow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W3322STB30NF20 200V 0.075 30A 125W11TO-2473 Gate charge minimized TO-2201 100% avalanche testedDPAK Excellent figure of me

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