APT5010B2VFR Todos los transistores

 ..1. Size:64K  apt
 apt5010b2vfr.pdf

APT5010B2VFR 500V 47A 0.100 POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche

 4.1. Size:61K  apt
 apt5010b2vr.pdf

APT5010B2VR 500V 47A 0.100 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low

 5.1. Size:64K  apt
 apt5010b2lc.pdf

APT5010B2LC APT5010LLC 500V 47A 0.100W B2LC TM POWER MOS VI T-MAX Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate LLC layout, delivers exceptionally fast

 5.2. Size:63K  apt
 apt5010b2fll.pdf

APT5010B2FLL APT5010LFLL 500V 46A 0.100W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

 5.3. Size:117K  apt
 apt5010b2lc-47434900.pdf

APT5010B2LC 500V 47A 0.100 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage T-MAX N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and C . rss Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. D L

 5.4. Size:170K  apt
 apt5010b2llg apt5010lllg.pdf

APT5010B2LL APT5010LLL 500V 46A 0.100 B2LL R POWER MOS 7 MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL

 5.5. Size:171K  apt
 apt5010b2fllg apt5010lfllg.pdf

APT5010B2FLL APT5010LFLL 500V 46A 0.100 R B2FLL POWER MOS 7 FREDFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses a

 5.6. Size:68K  apt
 apt5010b2ll.pdf

APT5010B2LL APT5010LLL 500V 46A 0.100W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

 5.7. Size:63K  apt
 apt5010b2.pdf

APT5010B2FLL APT5010LFLL 500V 46A 0.100W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

 5.8. Size:375K  inchange semiconductor
 apt5010b2fll.pdf

isc N-Channel MOSFET Transistor APT5010B2FLL FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 5.9. Size:375K  inchange semiconductor
 apt5010b2ll.pdf

isc N-Channel MOSFET Transistor APT5010B2LL FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp