BSC016N03LSG Todos los transistores

 

BSC016N03LSG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSC016N03LSG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.6 nS
   Cossⓘ - Capacitancia de salida: 2600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm
   Paquete / Cubierta: TDSON8

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BSC016N03LSG Datasheet (PDF)

 ..1. Size:387K  infineon
bsc016n03lsg.pdf

BSC016N03LSG
BSC016N03LSG

BSC016N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.6mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 3.1. Size:385K  infineon
bsc016n03ls.pdf

BSC016N03LSG
BSC016N03LSG

BSC016N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.6mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 3.2. Size:679K  infineon
bsc016n03ls .pdf

BSC016N03LSG
BSC016N03LSG

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 5.1. Size:542K  infineon
bsc016n03msg.pdf

BSC016N03LSG
BSC016N03LSG

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 5.2. Size:194K  infineon
bsc016n03ms.pdf

BSC016N03LSG
BSC016N03LSG

BSC016N03MS GProduct SummaryOptiMOS3 M-Series Power-MOSFETV 30 VDSFeaturesR V =10 V 1.6mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 2GS Low FOMSW for High Frequency SMPSI 100 AD 100% avalanche tested N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product

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