BSC017N04NSG Todos los transistores

 

BSC017N04NSG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSC017N04NSG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 139 W

Tensión drenaje-fuente (Vds): 40 V

Corriente continua de drenaje (Id): 100 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 81 nC

Resistencia drenaje-fuente RDS(on): 0.0017 Ohm

Empaquetado / Estuche: SuperSO8

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BSC017N04NSG Datasheet (PDF)

1.1. bsc017n04nsg rev1.24.pdf Size:639K _infineon

BSC017N04NSG
BSC017N04NSG

% ! !% D #:A0< &<,9=4=>:< #<:/?.> %?88,7 &( , - 6?A ,&), 1 7 m D n) m x P ( @C9=9I54 C538>?E5AC5AB 1 D 1) P * D1<96954 133?A49>7 C? $ 6?A C1A75C 1@@<931C9?>B G? D ON? P ' 381>>5< P '?A=1< <5E5< P G35<<5>C 71C5 381A75 G @A?4D3C ( & D n) P .5AH A5B9BC1>35 D n) P ,D@5A9?A C85A=1< A5B9BC1>35 P E1<1>385 C5BC54 P )2 6

5.1. bsc010ne2lsi.pdf Size:1788K _update-mosfet

BSC017N04NSG
BSC017N04NSG

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-MOSFET, 25 V BSC010NE2LSI Data Sheet Rev. 2.3 Final Power Management & Multimarket OptiMOSTM Power-MOSFET, 25 V BSC010NE2LSI SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resi

5.2. bsc014ne2lsi.pdf Size:699K _update-mosfet

BSC017N04NSG
BSC017N04NSG

BSC014NE2LSI OptiMOSTM Power-MOSFET Product Summary Features VDS 25 V • Optimized for high performance Buck converter RDS(on),max 1.4 mW • Monolithic integrated Schottky like diode A ID 100 • Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 25 nC • 100% avalanche tested 39 nC QG(0V..10V) • N-channel • Qualified according to JEDEC1) for target applicatio

 5.3. bsc016n03ls.pdf Size:385K _update-mosfet

BSC017N04NSG
BSC017N04NSG

BSC016N03LS G OptiMOS™3 Power-MOSFET Product Summary Features V 30 V DS • Fast switching MOSFET for SMPS R 1.6 mΩ DS(on),max • Optimized technology for DC/DC converters I 100 A D • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel • Logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on)

5.4. bsc014n04ls.pdf Size:641K _update-mosfet

BSC017N04NSG
BSC017N04NSG

BSC014N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V • Optimized for synchronous rectification RDS(on),max 1.4 mW • Very low on-state resistance R DS(on) ID 100 A • 100% avalanche tested Qoss 54 nC • Superior thermal resistance Qg(0V..10V) 61 nC • N-channel, logic level PG-TDSON-8 FL • Qualified according to JEDEC1) for target applications (

 5.5. bsc016n03ms.pdf Size:194K _update-mosfet

BSC017N04NSG
BSC017N04NSG

BSC016N03MS G Product Summary OptiMOS™3 M-Series Power-MOSFET V 30 V DS Features R V =10 V 1.6 mΩ DS(on),max GS • Optimized for 5V driver application (Notebook, VGA, POL) V =4.5 V 2 GS • Low FOMSW for High Frequency SMPS I 100 A D • 100% avalanche tested • N-channel PG-TDSON-8 • Very low on-resistance R @ V =4.5 V DS(on) GS • Excellent gate charge x R product

5.6. bsc010n04ls.pdf Size:573K _update-mosfet

BSC017N04NSG
BSC017N04NSG

BSC010N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V • Optimized for sychronous rectification RDS(on),max 1.0 mW • Very low on-resistance R DS(on) ID 100 A • 100% avalanche tested Qoss 84 nC • Superior thermal resistance Qg(0V..10V) 95 nC • N-channel, logic level PG-TDSON-8 FL • Qualified according to JEDEC1) for target applications (enlarg

5.7. bsc016n06ns.pdf Size:566K _update-mosfet

BSC017N04NSG
BSC017N04NSG

BSC016N06NS OptiMOSTM Power-MOSFET Product Summary Features VDS 60 V • Optimized for synchronous rectification RDS(on),max 1.6 mW • 100% avalanche tested ID 100 A • Superior thermal resistance QOSS 81 nC • N-channel QG(0V..10V) 71 nC • Qualified according to JEDEC1) for target applications PG-TDSON-8 FL • Pb-free lead plating; RoHS compliant enlarged source

5.8. bsc014n04lsi.pdf Size:598K _update-mosfet

BSC017N04NSG
BSC017N04NSG

BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V • Optimized for synchronous rectification RDS(on),max 1.45 mW • Integrated monolithic Schottky-like diode A ID 100 • Very low on-resistance R DS(on) QOSS 53 nC • 100% avalanche tested 55 nC QG(0V..10V) • N-channel, logic level PG-TDSON-8 FL • Qualified according to JEDEC1) for target a

5.9. bsc014n03ls.pdf Size:463K _update-mosfet

BSC017N04NSG
BSC017N04NSG

BSC014N03LS G OptiMOS™3 Power-MOSFET Product Summary Features V 30 V DS • Fast switching MOSFET for SMPS R 1.4 mΩ DS(on),max • Optimized technology for DC/DC converters I 100 A D • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel • Logic level; • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on)

5.10. bsc011n03lsi.pdf Size:698K _update-mosfet

BSC017N04NSG
BSC017N04NSG

BSC011N03LSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V • Optimized for high performance SMPS RDS(on),max 1.1 mW • Integrated monolithic Schottky-like diode ID 100 A • Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 45 nC • 100% avalanche tested QG(0V..10V) 68 nC • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for

5.11. bsc010n04lsi.pdf Size:598K _update-mosfet

BSC017N04NSG
BSC017N04NSG

BSC010N04LSI OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V • Optimized for synchronous rectification RDS(on),max 1.05 mW • Integrated monolithic Schottky-like diode A ID 100 • Very low on-resistance R DS(on) QOSS 83 nC • 100% avalanche tested 87 nC QG(0V..10V) • N-channel, channel • Qualified according to JEDEC1) for target applications PG-TDSO

5.12. bsc014n03ms.pdf Size:194K _update-mosfet

BSC017N04NSG
BSC017N04NSG

BSC014N03MS G OptiMOS™3 M-Series Power-MOSFET Product Summary Features V 30 V DS • Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 1.4 mΩ DS(on),max GS • Low FOMSW for High Frequency SMPS V =4.5 V 1.75 GS • 100% avalanche tested I 100 A D • N-channel PG-TDSON-8 • Very low on-resistance R @ V =4.5 V DS(on) GS • Excellent gate charge x R prod

5.13. bsc018ne2lsi.pdf Size:637K _update-mosfet

BSC017N04NSG
BSC017N04NSG

BSC018NE2LSI OptiMOSTM Power-MOSFET Product Summary Features VDS 25 V • Optimized for high performance Buck converter RDS(on),max 1.8 mW • Monolithic integrated Schottky like diode A ID 100 • Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 23 nC • 100% avalanche tested 36 nC QG(0V..10V) • N-channel • Qualified according to JEDEC1) for target applicatio

5.14. bsc019n02ks.pdf Size:663K _update-mosfet

BSC017N04NSG
BSC017N04NSG

 % ! % D #:A0< &<,9=4=>:< #<:/?.> %?88,2= B6C:CD2?46 Q F2=2?496 B2D6

5.15. bsc019n04ls.pdf Size:526K _update-mosfet

BSC017N04NSG
BSC017N04NSG

BSC019N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V • Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 1.9 mW • Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A • 100% avalanche tested QOSS 37 nC • Superior thermal resistance QG(0V..10V) 41 nC • N-channel • Qualified according to JEDEC1) for target applications PG-TDSON-

5.16. bsc014n06ns.pdf Size:511K _update-mosfet

BSC017N04NSG
BSC017N04NSG

Type BSC014N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS(on),max 1.45 mW • Superior thermal resistance ID 100 A • N-channel QOSS nC 100 • Qualified according to JEDEC1) for target applications QG(0V..10V) nC 89 • Pb-free lead plating; RoHS compliant PG-

5.17. bsc019n04nsg rev1.4.pdf Size:640K _infineon

BSC017N04NSG
BSC017N04NSG

% ! !% D #:A0< &<,9=4=>:< #<:/?.> %?88,7 &( , - 6?A ,&), 1 m D n) m x P ( @C9=9I54 C538>?E5AC5AB 1 D 1) P * D1<96954 133?A49>7 C? $ 6?A C1A75C 1@@<931C9?>B G? D ON? P ' 381>>5< '?A=1< <5E5< P G35<<5>C 71C5 381A75 G @A?4D3C ( & D n) P .5AH A5B9BC1>35 D n) P ,D@5A9?A C85A=1< A5B9BC1>35 P E1<1>385 C5BC54 P )2 6A55

5.18. bsc019n02ksgrev1.41.pdf Size:666K _infineon

BSC017N04NSG
BSC017N04NSG

% ! % D #:A0< &<,9=4=>:< #<:/?.> %?88,2= B6C:CD2?46 Q F2=2?496 B2D65 Q *3

5.19. bsc011n03ls rev2.1.pdf Size:1620K _infineon

BSC017N04NSG
BSC017N04NSG

n-Channel Power MOSFET OptiMOS BSC011N03LS Data Sheet 2.1, 2011-09-23 Preliminary Industrial & Multimarket OptiMOS Power-MOSFET BSC011N03LS 1 Description OptiMOS30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS

5.20. bsc016n03msg rev1.17.pdf Size:542K _infineon

BSC017N04NSG
BSC017N04NSG

% ! % #<:/?.> %?88,;53F;A@ ) AF74AA= 0" +* ' 0 G S 'AI !* ( 8AD #;9: !D7CG7@5K .( +. 1 D S 3H3>3@5:7 F7EF76 S ) 5:3@@7> G? D ON? S 07DK >AI A@ D7E;EF3@57 0 D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n) 1) S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@E S .GB7D;AD F:7D?3

5.21. bsc014n03msg rev1.5.pdf Size:540K _infineon

BSC017N04NSG
BSC017N04NSG

% ! % D %0<40= #:A0< "% & #<:/?.> %?88,;53F;A@ ) AF74AA= 0" +* ' 0 1 4 m D n) m x G S 'AI !* ( 8AD #;9: !D7CG7@5K .( +. 0 1 7 G S 3H3>3@5:7 F7EF76 1 D S ) 5:3@@7> G? D ON? S 07DK >AI A@ D7E;EF3@57 0 D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n) 1) S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@E S .GB7D;AD F

5.22. bsc010ne2ls rev2.1.pdf Size:1611K _infineon

BSC017N04NSG
BSC017N04NSG

n-Channel Power MOSFET OptiMOS BSC010NE2LS Data Sheet 2.1, 2011-09-19 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC010NE2LS 1 Description OptiMOS25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS 25V t

5.23. bsc014n03ls rev1.3.pdf Size:700K _infineon

BSC017N04NSG
BSC017N04NSG

& " & E $;B1= !#& ' $=;0@/? &@99-=y Features D Q 2CD CG:D49:?8 ') - . 7@B -'*- 1 4 m D n) m x Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G? D ON? Q ( 492??6= Q &@8:4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C:CD2?46 D n) Q -EA6B:@B D96B>2= B6C:CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D:?8 ,

5.24. bsc018ne2ls rev2.1.pdf Size:1615K _infineon

BSC017N04NSG
BSC017N04NSG

n-Channel Power MOSFET OptiMOS BSC018NE2LS Data Sheet 2.1, 2011-09-20 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC018NE2LS 1 Description OptiMOS25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS 25V t

5.25. bsc016n04lsg rev2.0.pdf Size:311K _infineon

BSC017N04NSG
BSC017N04NSG

BSC016N04LS G OptiMOS3 Power-Transistor Product Summary V 40 V Features DS R 1.6 m? Fast switching MOSFET for SMPS DS(on),max I 100 A Optimized technology for DC/DC converters D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superior thermal res

5.26. bsc016n03ls rev1.28.pdf Size:679K _infineon

BSC017N04NSG
BSC017N04NSG

& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG:D49:?8 ') - . 7@B -'*- 1 m D n) m x Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G? D ON? Q ( 492??6= Q &@8:4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C:CD2?46 D n) Q -EA6B:@B D96B>2= B6C:CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D:?8 ,

5.27. bsc018n04lsg rev1.4.pdf Size:651K _infineon

BSC017N04NSG
BSC017N04NSG

& " & E $;B1= '=-:>5>?;= $=;0@/? &@99-=D 4 Features D 1 mW Q 2CD CG:D49:?8 ') - . 7@B -'*- D n) m x 1 Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G? D ON? Q ( 492??6= &@8:4 =6F6= Q H46==6?D 82D6 492B86 H , - @? AB@5E4D ) ' Q /6BI =@G @? B6C:CD2?46 , - @? Q -EA6B:@B D96B>2= B6C:CD2?46 Q F2=2?496 D6CD65 Q *3 7B66 A=2D

Otros transistores... GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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