BSC031N06NS3G Todos los transistores

 ..1. Size:586K  infineon
 bsc031n06ns3 bsc031n06ns3g.pdf

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 9.1. Size:687K  infineon
 bsc030n03ls .pdf

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 9.2. Size:378K  infineon
 bsc030n04nsg.pdf

BSC030N04NS G OptiMOS 3 Power-Transistor Product Summary V 40 V Features DS R 3.0 m Fast switching MOSFET for SMPS DS(on),max I 100 A Optimized technology for DC/DC converters D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) S

 9.3. Size:1196K  infineon
 bsc035n10ns5.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM 5 Power-Transistor, 100 V BSC035N10NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM 5 Power-Transistor, 100 V BSC035N10NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior therma

 9.4. Size:521K  infineon
 bsc039n06ns.pdf

Type BSC039N06NS OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 3.9 mW Superior thermal resistance ID 100 A N-channel QOSS nC 32 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 27 Pb-free lead plating; RoHS compliant H

 9.5. Size:1186K  infineon
 bsc030n08ns5.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC030N08NS5 Data Sheet Rev. 2.2 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC030N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

 9.6. Size:384K  infineon
 bsc030n03lsg.pdf

BSC030N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS R 3 m Fast switching MOSFET for SMPS DS(on),max I 100 A D Optimized technology for DC/DC converters PG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi

 9.7. Size:1182K  infineon
 bsc037n08ns5.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC037N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC037N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

 9.8. Size:549K  infineon
 bsc030p03ns3g.pdf

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 9.9. Size:631K  infineon
 bsc034n03ls.pdf

BSC034N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 3.4 mW Optimized technology for DC/DC converters ID 100 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Sup

 9.10. Size:489K  infineon
 bsc034n06ns.pdf

Type BSC034N06NS OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 3.4 mW Superior thermal resistance ID 100 A N-channel QOSS nC 37 Qualified according to JEDEC1) for target applications QG(0V..10V) 33 nC Pb-free lead plating; RoHS compliant Hal

 9.11. Size:195K  infineon
 bsc030n03ms.pdf

BSC030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 3 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 3.8 GS I 100 A 100% avalanche tested D PG-TDSON-8 N-channel Very low on-resistance RDS(on) @ VGS=4.5V Excellent gate charge x RDS(on) product

 9.12. Size:543K  infineon
 bsc030n03msg.pdf

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 9.13. Size:632K  infineon
 bsc032n03s.pdf

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 9.14. Size:670K  infineon
 bsc034n03lsg.pdf

BSC034N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 3.4 mW Optimized technology for DC/DC converters ID 100 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Sup

 9.15. Size:815K  infineon
 bsc037n08ns5t.pdf

BSC037N08NS5T MOSFET SuperSO8 OptiMOSTM 5 Power-Transistor, 80 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Halogen-free according to IEC61249-2-21 3 1 4 Product validation Fully qualified according to JEDE

 9.16. Size:716K  infineon
 bsc032ne2ls.pdf

 9.17. Size:602K  infineon
 bsc032n04ls.pdf

BSC032N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 3.2 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 98 A 100% avalanche tested QOSS 22 nC Superior thermal resistance QG(0V..10V) 25 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-8

 9.18. Size:382K  infineon
 bsc030n03ls.pdf

BSC030N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS R 3 m Fast switching MOSFET for SMPS DS(on),max I 100 A D Optimized technology for DC/DC converters PG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi

 9.19. Size:1071K  infineon
 bsc034n10ls5.pdf

BSC034N10LS5 MOSFET SuperSO8 OptiMOSTM 5 Power-Transistor, 100 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Halogen-free according to IEC61249-2-21 3 1 4 Product validation Fully qualified acco

 9.20. Size:380K  infineon
 bsc035n04lsg.pdf

BSC035N04LS G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

 9.21. Size:592K  infineon
 bsc036ne7ns3g.pdf

BSC036NE7NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 75 V Optimized technology for synchronous rectification RDS(on),max 3.6 mW Ideal for high frequency switching and DC/DC converters ID 100 A Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS

 9.22. Size:686K  infineon
 bsc034n03ls .pdf

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