BSC046N02KSG Todos los transistores

 

BSC046N02KSG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSC046N02KSG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 48 W

Tensión drenaje-fuente (Vds): 20 V

Corriente continua de drenaje (Id): 80 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 21 nC

Resistencia drenaje-fuente RDS(on): 0.0046 Ohm

Empaquetado / Estuche: SuperSO8

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BSC046N02KSG Datasheet (PDF)

1.1. bsc046n02ksgrev1.06.pdf Size:666K _infineon

BSC046N02KSG
BSC046N02KSG

% ! % D #:A0< &<,9=4=>:< #<:/?.> %?88,2= B6C:CD2?46 Q F2=2?496 B2D65 Q *3 7B

5.1. bsc042ne7ns3g rev2.21.pdf Size:590K _infineon

BSC046N02KSG
BSC046N02KSG

$ $ "9@/; %;+8<3<=9; ";9.>-= $>77+;B Features 7 D Q ( @D9=9J54 D538>?38B?>?EC B53D96931D9?> 4 m D n) m x Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 3?>F5BD5BC 1 D Q H35<<5>D 71D5 381B75 H @B?4E3D ( & D n) Q ,E@5B9?B D85B=1< B5C9CD1>35 Q ' 381>>5< >?B=1< <5F5< Q 1F1<1>385 D5CD54 Q )2 6B55 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@

5.2. bsc042n03msg rev2.0. pdf.pdf Size:267K _infineon

BSC046N02KSG
BSC046N02KSG

BSC042N03MS G OptiMOS3 Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.2 m? DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 5.4 GS 100% Avalanche tested I 93 A D N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS(on) Qualified

 5.3. bsc042n03s rev1.91 g.pdf Size:637K _infineon

BSC046N02KSG
BSC046N02KSG

% ! % D #:A0< &<,9=4=>:< #<:/?.> %?88, 6BAH8DF8DE 95 A D 1 S + G4?<9<87 466BD75.4. bsc042n03ls rev1.25.pdf Size:664K _infineon

BSC046N02KSG
BSC046N02KSG

& " & $=;0@/? &@99-=D E $;B1= !#& ' D Features 4 m D n) m x Q 2CD CG:D49:?8 ') - . 7@B -'*- D Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 1) G? D ON? Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C Q ( 492??6= &@8:4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C:CD2?46 D n) Q -EA6B:@B D96B>2= B6C:CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D:?8 , @"- 4@>A

 5.5. bsc047n08ns3g rev2.6.pdf Size:321K _infineon

BSC046N02KSG
BSC046N02KSG

BSC047N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching and sync. rec. R 4.7 m? DS(on),max Optimized technology for DC/DC converters I 100 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plati

Otros transistores... BSC031N06NS3G , BSC032N03SG , BSC034N03LSG , BSC035N04LSG , BSC042N03LSG , BSC042N03MSG , BSC042N03SG , BSC042NE7NS3G , 2N3824 , BSC047N08NS3G , BSC050N03LSG , BSC050N03MSG , BSC050N04LSG , BSC050NE2LS , BSC052N03LS , BSC052N03SG , BSC054N04NSG .

 
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