BSC046N02KSG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC046N02KSG 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 19 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 117 nS
Cossⓘ - Capacitancia de salida: 910 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
Encapsulados: TDSON8
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BSC046N02KSG datasheet
7.1. Size:554K infineon
bsc046n10ns3g.pdf 
BSC046N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V Very low gate charge for high frequency applications RDS(on),max 4.6 mW Optimized for dc-dc conversion ID 100 A N-channel, normal level PG-TDSON-8 Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 150 C operating temperature Pb-free lead plati
9.2. Size:1193K infineon
bsc040n08ns5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC040N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC040N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re
9.3. Size:664K infineon
bsc042n03ls .pdf
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9.4. Size:483K infineon
bsc042n03ls bsc042n03lsg.pdf
BSC042N03LS G OptiMOS 3 Power-MOSFET Product Summary VDS 30 V Features RDS(on),max 4.2 mW Fast switching MOSFET for SMPS ID 93 A Optimized technology for DC/DC converters PG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi
9.5. Size:996K infineon
bsc0402ns.pdf
BSC0402NS MOSFET SuperSO8 OptiMOSTM5 Power-Transistor, 150 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. Sync. Rec. 100% avalanche tested Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Halogen-free according to IEC61249-2-21 3 1 4 Low Q rr Product validation Qualified according to
9.6. Size:484K infineon
bsc042n03ms.pdf
BSC042N03MS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 4.2 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 5.4 100% Avalanche tested ID 93 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS(on)
9.7. Size:383K infineon
bsc042n03s.pdf
BSC042N03S G OptiMOS 2 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 4.2 m DS(on),max Optimized technology for notebook DC/DC converters I 95 A D Qualified according to JEDEC1 for target applications PG-TDSON-8 Logic level / N-channel Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(
9.8. Size:1008K infineon
bsc040n10ns5sc.pdf
BSC040N10NS5SC MOSFET PG-WSON-8-2 OptiMOSTM 5 Power-Transistor, 100 V Features Double sided cooled package-with lowest Junction-top thermal resistance tab 175 C rated Optimized for high performance SMPS, e.g. sync. rec. 5 6 100% avalanche tested 7 8 Superior thermal resistance 4 3 N-channel 2 1 Pb-free lead plating; RoHS compliant Halogen-fr
9.9. Size:267K infineon
bsc042n03msg.pdf
BSC042N03MS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.2 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 5.4 GS 100% Avalanche tested I 93 A D N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) D
9.10. Size:321K infineon
bsc047n08ns3g.pdf
BSC047N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching and sync. rec. R 4.7 m DS(on),max Optimized technology for DC/DC converters I 100 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) Superior thermal resistance N-channel, normal level 100% avalanche test
9.11. Size:1192K infineon
bsc040n10ns5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM 5 Power-Transistor, 100 V BSC040N10NS5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSTM 5 Power-Transistor, 100 V BSC040N10NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior therma
9.12. Size:590K infineon
bsc042ne7ns3g.pdf
$ $ "9@/; %;+877+;B Features 7 D Q ( @D9=9J54 D538>??EC B53D96931D9?> 4 m D n) m x Q #4513I CG9D389>7 1>4 3?>F5BD5BC 1 D Q H35>5?B=1
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