BSC050NE2LS Todos los transistores

 

BSC050NE2LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSC050NE2LS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 28 W

Tensión drenaje-fuente (Vds): 25 V

Corriente continua de drenaje (Id): 58 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.005 Ohm

Empaquetado / Estuche: SuperSO8

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BSC050NE2LS Datasheet (PDF)

1.1. bsc050ne2ls rev2.1 .pdf Size:1634K _infineon

BSC050NE2LS
BSC050NE2LS

n-Channel Power MOSFET OptiMOS BSC050NE2LS Data Sheet 2.1, 2011-09-20 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC050NE2LS 1 Description OptiMOS25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS 25V t

3.1. bsc050n03ms.pdf Size:485K _update-mosfet

BSC050NE2LS
BSC050NE2LS

BSC050N03MS G OptiMOS™3 M-Series Power-MOSFET Product Summary Features VDS 30 V • Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5 mW • Low FOMSW for High Frequency SMPS VGS=4.5 V 6.3 • 100% avalanche tested ID 80 A PG-TDSON-8 • N-channel • Very low on-resistance R @ V =4.5 V DS(on) GS • Excellent gate charge x R product (FOM) DS

3.2. bsc050n03ls.pdf Size:482K _update-mosfet

BSC050NE2LS
BSC050NE2LS

BSC050N03LS G OptiMOS™3 Power-MOSFET Product Summary Features VDS 30 V • Fast switching MOSFET for SMPS RDS(on),max 5 mW • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) • Superio

 3.3. bsc050n03msg rev1.15.pdf Size:548K _infineon

BSC050NE2LS
BSC050NE2LS

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3.4. bsc050n04lsg rev1.04.pdf Size:649K _infineon

BSC050NE2LS
BSC050NE2LS

& " & E $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 4 D Q 2CD CG:D49:?8 ') - . 7@B -'*- m D n) m x Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G? D ON? Q ( 492??6= &@8:4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C:CD2?46 D n) Q -EA6B:@B D96B>2= B6C:CD2?46 Q F2=2?496 D6CD65 Q *3 7B66 A=2D:?8 , @"

 3.5. bsc050n03ls rev1.6.pdf Size:691K _infineon

BSC050NE2LS
BSC050NE2LS

& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG:D49:?8 ') - . 7@B -'*- m D n) m x Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G? D ON? Q ( 492??6= &@8:4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C:CD2?46 D n) Q -EA6B:@B D96B>2= B6C:CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?D

Otros transistores... BSC042N03MSG , BSC042N03SG , BSC042NE7NS3G , BSC046N02KSG , BSC047N08NS3G , BSC050N03LSG , BSC050N03MSG , BSC050N04LSG , IRFP150N , BSC052N03LS , BSC052N03SG , BSC054N04NSG , BSC057N03LSG , BSC057N03MSG , BSC057N08NS3G , BSC059N03SG , BSC059N04LSG .

 

 
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