BSC050NE2LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC050NE2LS
Código: 050NE2LS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 19 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 VQgⓘ - Carga de la puerta: 10.4 nC
trⓘ - Tiempo de subida: 2.2 nS
Cossⓘ - Capacitancia de salida: 320 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: TDSON8
Búsqueda de reemplazo de MOSFET BSC050NE2LS
BSC050NE2LS Datasheet (PDF)
bsc050ne2ls .pdf
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bsc050n03msg5.pdf
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bsc050n03ls .pdf
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bsc050n03lsg.pdf
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