BSC076N06NS3G Todos los transistores

 

BSC076N06NS3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSC076N06NS3G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 660 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0076 Ohm
   Paquete / Cubierta: TDSON8

 Búsqueda de reemplazo de MOSFET BSC076N06NS3G

 

BSC076N06NS3G Datasheet (PDF)

 ..1. Size:392K  infineon
bsc076n06ns3g.pdf

BSC076N06NS3G
BSC076N06NS3G

TypeBSC076N06NS3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 7.6 mW Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS comp

 2.1. Size:586K  infineon
bsc076n06ns3.pdf

BSC076N06NS3G
BSC076N06NS3G

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 6.1. Size:1188K  infineon
bsc076n04nd.pdf

BSC076N06NS3G
BSC076N06NS3G

BSC076N04NDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 40 V8 17Features 26354 Dual N-channel, normal level Fast switching MOSFETs Optimized technology for drives applications Superior thermal resistance182 7 100% avalanche tested3 654 Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product ValidationQual

 9.1. Size:1132K  infineon
bsc072n04ld.pdf

BSC076N06NS3G
BSC076N06NS3G

BSC072N04LDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 40 V8 17Features 26354 Dual N-channel, logic level Fast switching MOSFETs for SMPS Optimized technology for Synchronous Rectification Pb-free plating; RoHS compliant182 7 100% Avalanche tested3 654 Halogen-free according to IEC61249-2-21 Superior thermal resistanceProduct Va

 9.2. Size:1175K  infineon
bsc070n10ns5.pdf

BSC076N06NS3G
BSC076N06NS3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 100 VBSC070N10NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 100 VBSC070N10NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal

 9.3. Size:342K  infineon
bsc079n03s.pdf

BSC076N06NS3G
BSC076N06NS3G

BSC079N03S GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 7.9mDS(on),max Optimized technology for notebook DC/DC convertersI 40 AD Qualified according to JEDEC1) for target applications N-channel Logic levelP-TDSON-8P-TDSON-8 Excellent gate charge x R product (FOM)DS(on) Very low on-resi

 9.4. Size:380K  infineon
bsc079n03sg.pdf

BSC076N06NS3G
BSC076N06NS3G

BSC079N03S GProduct SummaryOptiMOS2 Power-TransistorFeatures V 30 VDSR 7.9 Fast switching MOSFET for SMPS mDS(on),maxI 40 A Optimized technology for notebook DC/DC convertersD Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 9.5. Size:1079K  infineon
bsc0702ls.pdf

BSC076N06NS3G
BSC076N06NS3G

BSC0702LSMOSFETSuperSO8OptiMOSTM Power-Transistor, 60 V5867Features 7685 Ideal for high-frequency switching Optimized for chargers 100% avalanche tested Superior thermal resistance4 N-channel, Logic level132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according to IEC61249-2-21 Qualified for Standard Grade app

 9.6. Size:591K  infineon
bsc072n03ld .pdf

BSC076N06NS3G
BSC076N06NS3G

% ! D #:A0

 9.7. Size:1168K  infineon
bsc072n08ns5.pdf

BSC076N06NS3G
BSC076N06NS3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC072N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC072N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

 9.8. Size:971K  infineon
bsc074n15ns5.pdf

BSC076N06NS3G
BSC076N06NS3G

BSC074N15NS5MOSFETTSON-8-3OptiMOSTM 5 Power-Transistor, 150 V8756 6Features 758 N-channel, normal levelPin 1 Excellent gate charge x R product (FOM)DS(on)2433 Very low on-resistance RDS(on)4 21 Very low reverse recovery charge (Q )rr 175 C operating temperature Pb-free lead plating; RoHS compliant Ideal for high-freque

 9.9. Size:1075K  infineon
bsc070n10ls5.pdf

BSC076N06NS3G
BSC076N06NS3G

BSC070N10LS5MOSFETSuperSO8OptiMOSTM5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14Product validationFully qualified accor

 9.10. Size:655K  infineon
bsc070n10ns3rev21.pdf

BSC076N06NS3G
BSC076N06NS3G

% ! !% TM #:A0DQ ' 381>>5?B=1

 9.11. Size:434K  infineon
bsc070n10ns3g.pdf

BSC076N06NS3G
BSC076N06NS3G

BSC070N10NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 100 V Very low gate charge for high frequency applicationsRDS(on),max 7mW Optimized for dc-dc conversionID 90 A N-channel, normal levelPG-TDSON-8 Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 150 C operating temperature Pb-free lead plating;

 9.12. Size:658K  infineon
bsc077n12ns3.pdf

BSC076N06NS3G
BSC076N06NS3G

% ! !% TM #:A0

 9.13. Size:661K  infineon
bsc079n10ns5 bsc079n10nsg.pdf

BSC076N06NS3G
BSC076N06NS3G

% ! !% D #:A0

 9.14. Size:1443K  infineon
bsc077n12ns3g.pdf

BSC076N06NS3G
BSC076N06NS3G

BSC077N12NS3 GMOSFETSuperSO8OptiMOSTM3 Power-Transistor, 120 V5867Features 7685 N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 150 C operating temperature4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Ideal for hi

 9.15. Size:985K  infineon
bsc070n10ns5sc.pdf

BSC076N06NS3G
BSC076N06NS3G

BSC070N10NS5SCMOSFETPG-WSON-8-2OptiMOSTM 5 Power-Transistor, 100 VFeatures Double sided cooled package-with lowest Junction-top thermal resistancetab 175C rated Optimized for high performance SMPS, e.g. sync. rec.56 100% avalanche tested78 Superior thermal resistance43 N-channel21 Pb-free lead plating; RoHS compliant Halogen-fr

 9.16. Size:384K  infineon
bsc079n03lscg.pdf

BSC076N06NS3G
BSC076N06NS3G

BSC079N03LSC GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 7.9mDS(on),max Optimized technology for DC/DC convertersI 50 AD Improved switching behaviourPG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very l

 9.17. Size:317K  infineon
bsc072n03ld.pdf

BSC076N06NS3G
BSC076N06NS3G

BSC072N03LD GOptiMOS3 Power-TransistorsProduct SummaryFeaturesV 30 VDS Dual N-channel, logic levelR 7.2mDS(on),maxI 20 A Fast switching MOSFETs for SMPS DPG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

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