BSC076N06NS3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC076N06NS3G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 40 nS
Cossⓘ - Capacitancia de salida: 660 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0076 Ohm
Encapsulados: TDSON8
Búsqueda de reemplazo de BSC076N06NS3G MOSFET
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BSC076N06NS3G datasheet
..1. Size:392K infineon
bsc076n06ns3g.pdf 
Type BSC076N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 60 V Ideal for high frequency switching and sync. rec. RDS(on),max 7.6 mW Optimized technology for DC/DC converters ID 50 A Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS comp
2.1. Size:586K infineon
bsc076n06ns3.pdf
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6.1. Size:1188K infineon
bsc076n04nd.pdf
BSC076N04ND MOSFET PG-TDSON-8-4 OptiMOSTM-T2 Power Transistor, 40 V 8 1 7 Features 2 6 3 5 4 Dual N-channel, normal level Fast switching MOSFETs Optimized technology for drives applications Superior thermal resistance 1 8 2 7 100% avalanche tested 3 6 5 4 Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product Validation Qual
9.1. Size:1132K infineon
bsc072n04ld.pdf
BSC072N04LD MOSFET PG-TDSON-8-4 OptiMOSTM-T2 Power Transistor, 40 V 8 1 7 Features 2 6 3 5 4 Dual N-channel, logic level Fast switching MOSFETs for SMPS Optimized technology for Synchronous Rectification Pb-free plating; RoHS compliant 1 8 2 7 100% Avalanche tested 3 6 5 4 Halogen-free according to IEC61249-2-21 Superior thermal resistance Product Va
9.2. Size:1175K infineon
bsc070n10ns5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 100 V BSC070N10NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 100 V BSC070N10NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal
9.3. Size:342K infineon
bsc079n03s.pdf
BSC079N03S G OptiMOS 2 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 7.9 m DS(on),max Optimized technology for notebook DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications N-channel Logic level P-TDSON-8 P-TDSON-8 Excellent gate charge x R product (FOM) DS(on) Very low on-resi
9.4. Size:380K infineon
bsc079n03sg.pdf
BSC079N03S G Product Summary OptiMOS 2 Power-Transistor Features V 30 V DS R 7.9 Fast switching MOSFET for SMPS m DS(on),max I 40 A Optimized technology for notebook DC/DC converters D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)
9.5. Size:1079K infineon
bsc0702ls.pdf
BSC0702LS MOSFET SuperSO8 OptiMOSTM Power-Transistor, 60 V 5 8 6 7 Features 7 6 8 5 Ideal for high-frequency switching Optimized for chargers 100% avalanche tested Superior thermal resistance 4 N-channel, Logic level 1 3 2 2 Pb-free lead plating; RoHS compliant 3 1 4 Halogen-free according to IEC61249-2-21 Qualified for Standard Grade app
9.7. Size:1168K infineon
bsc072n08ns5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC072N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC072N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re
9.8. Size:971K infineon
bsc074n15ns5.pdf
BSC074N15NS5 MOSFET TSON-8-3 OptiMOSTM 5 Power-Transistor, 150 V 8 7 5 6 6 Features 7 5 8 N-channel, normal level Pin 1 Excellent gate charge x R product (FOM) DS(on) 2 4 3 3 Very low on-resistance R DS(on) 4 2 1 Very low reverse recovery charge (Q ) rr 175 C operating temperature Pb-free lead plating; RoHS compliant Ideal for high-freque
9.9. Size:1075K infineon
bsc070n10ls5.pdf
BSC070N10LS5 MOSFET SuperSO8 OptiMOSTM5 Power-Transistor, 100 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Halogen-free according to IEC61249-2-21 3 1 4 Product validation Fully qualified accor
9.11. Size:434K infineon
bsc070n10ns3g.pdf
BSC070N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V Very low gate charge for high frequency applications RDS(on),max 7 mW Optimized for dc-dc conversion ID 90 A N-channel, normal level PG-TDSON-8 Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 150 C operating temperature Pb-free lead plating;
9.14. Size:1443K infineon
bsc077n12ns3g.pdf
BSC077N12NS3 G MOSFET SuperSO8 OptiMOSTM3 Power-Transistor, 120 V 5 8 6 7 Features 7 6 8 5 N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 150 C operating temperature 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Qualified according to JEDEC1) for target application 3 1 4 Ideal for hi
9.15. Size:985K infineon
bsc070n10ns5sc.pdf
BSC070N10NS5SC MOSFET PG-WSON-8-2 OptiMOSTM 5 Power-Transistor, 100 V Features Double sided cooled package-with lowest Junction-top thermal resistance tab 175 C rated Optimized for high performance SMPS, e.g. sync. rec. 5 6 100% avalanche tested 7 8 Superior thermal resistance 4 3 N-channel 2 1 Pb-free lead plating; RoHS compliant Halogen-fr
9.16. Size:384K infineon
bsc079n03lscg.pdf
BSC079N03LSC G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 7.9 m DS(on),max Optimized technology for DC/DC converters I 50 A D Improved switching behaviour PG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very l
9.17. Size:317K infineon
bsc072n03ld.pdf
BSC072N03LD G OptiMOS 3 Power-Transistors Product Summary Features V 30 V DS Dual N-channel, logic level R 7.2 m DS(on),max I 20 A Fast switching MOSFETs for SMPS D PG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on
Otros transistores... BSC057N08NS3G
, BSC059N03SG
, BSC059N04LSG
, BSC060N10NS3G
, BSC060P03NS3EG
, BSC067N06LS3G
, BSC070N10NS3G
, BSC072N03LDG
, EMB04N03H
, BSC077N12NS3G
, BSC079N10NSG
, BSC080N03LSG
, BSC080N03MSG
, BSC080P03LSG
, BSC082N10LSG
, BSC084P03NS3G
, BSC084P03NS3EG
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