BSC077N12NS3G Todos los transistores

 

BSC077N12NS3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSC077N12NS3G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 139 W

Tensión drenaje-fuente (Vds): 120 V

Corriente continua de drenaje (Id): 98 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 66 nC

Resistencia drenaje-fuente RDS(on): 0.0077 Ohm

Empaquetado / Estuche: SuperSO8

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BSC077N12NS3G Datasheet (PDF)

1.1. bsc077n12ns3rev2.5.pdf Size:658K _infineon

BSC077N12NS3G
BSC077N12NS3G

% ! !% TM #:A0< &<,9=4=>:< #<:/?.> %?88,>5< >?B=1< <5F5< D n) m x Q H35<<5>D 71D5 381B75 H @B?4E3D ( & D D n) G? D ON? Q .5BI B5C9CD1>35 D n) Q T ?@5B1D9>7 D5=@5B1DEB5 Q )2 6B55 <514 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D9?> Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>38B?>?EC B53D96931D9?> Q "

5.1. bsc072n03ld.pdf Size:317K _update-mosfet

BSC077N12NS3G
BSC077N12NS3G

BSC072N03LD G OptiMOS™3 Power-Transistors Product Summary Features V 30 V DS • Dual N-channel, logic level R 7.2 mΩ DS(on),max I 20 A • Fast switching MOSFETs for SMPS D PG-TDSON-8 • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on

5.2. bsc079n03s.pdf Size:342K _update-mosfet

BSC077N12NS3G
BSC077N12NS3G

BSC079N03S G OptiMOS®2 Power-Transistor Product Summary Features V 30 V DS • Fast switching MOSFET for SMPS R 7.9 mΩ DS(on),max • Optimized technology for notebook DC/DC converters I 40 A D • Qualified according to JEDEC1) for target applications • N-channel • Logic level P-TDSON-8 P-TDSON-8 • Excellent gate charge x R product (FOM) DS(on) • Very low on-resi

 5.3. bsc072n08ns5.pdf Size:1168K _update-mosfet

BSC077N12NS3G
BSC077N12NS3G

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC072N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC072N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal re

5.4. bsc079n03sg.pdf Size:380K _update-mosfet

BSC077N12NS3G
BSC077N12NS3G

BSC079N03S G Product Summary OptiMOS™2 Power-Transistor Features V 30 V DS R 7.9 • Fast switching MOSFET for SMPS mΩ DS(on),max I 40 A • Optimized technology for notebook DC/DC converters D • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on)

 5.5. bsc070n10ns5.pdf Size:1175K _update-mosfet

BSC077N12NS3G
BSC077N12NS3G

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 100 V BSC070N10NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 100 V BSC070N10NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal

5.6. bsc079n10nsrev1.05.pdf Size:661K _infineon

BSC077N12NS3G
BSC077N12NS3G

% ! !% D #:A0< &<,9=4=>:< #<:/?.> %?88,>5< '?B=1< <5F5< 7 m D n) m x Q H35<<5>D 71D5 381B75 H @B?4E3D ( & D n) 1 D Q .5BI B5C9CD1>35 D n) G? D ON? Q T ?@5B1D9>7 D5=@5B1DEB5 Q )2 6B55 <514 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D9?> Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>38B?>?EC B53D96931D9?> Q

5.7. bsc072n03ld rev1.4.pdf Size:591K _infineon

BSC077N12NS3G
BSC077N12NS3G

% ! D #:A0< &<,9=4=>:<= #<:/?.> %?88,:J65 D649?@=@8I 7@B 4@?F6BD6BC 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C:CD2?46 D n) Q -EA6B:@B D96B>2= B6C:CD2?46 Q 2F2=2?496 D6CD65 Q *3 7B66 A=2D:?8

5.8. bsc070n10ns3rev21.pdf Size:655K _infineon

BSC077N12NS3G
BSC077N12NS3G

% ! !% TM #:A0< &<,9=4=>:< #<:/?.> %?88,3I 1@@<931D9?>C 7 m D n) m x Q ( @D9=9J54 6?B 43 43 3?>F5BC9?> D Q ' 381>>5< >?B=1< <5F5< G? D ON? Q H35<<5>D 71D5 381B75 H @B?4E3D ( & D n) Q .5BI B5C9CD1>35 D n) Q T ?@5B1D9>7 D5=@5B1DEB5 Q )2 6B55 <514 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D

5.9. bsc076n06ns3 rev2.3.pdf Size:586K _infineon

BSC077N12NS3G
BSC077N12NS3G

pe % ! !% TM #:A0< &<,9=4=>:< #<:/?.> %?88,3I CG9D389>7 1>4 CI>3 B53 R 7 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I D Q H35<<5>D 71D5 381B75 H R @B?4E3D ( & D n) Q ,E@5B9?B D85B=1< B5C9CD1>35 Q ' 381>>5< >?B=1< <5F5< Q 1F1<1>385 D5CD54 Q )2 6B55 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D

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