BSC080N03LSG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC080N03LSG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.8 nS
Cossⓘ - Capacitancia de salida: 510 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Paquete / Cubierta: TDSON8
Búsqueda de reemplazo de BSC080N03LSG MOSFET
BSC080N03LSG PDF Specs
bsc080n03lsg.pdf
BSC080N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 8 mW Optimized technology for DC/DC converters ID 53 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio... See More ⇒
bsc080n03ls.pdf
BSC080N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 8 mW Optimized technology for DC/DC converters ID 53 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio... See More ⇒
bsc080n03ls5.pdf
& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- m D n) m x Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C G D ON Q ( 492??6= &@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q -EA6B @B D96B>2= B6C CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @"- 4... See More ⇒
bsc080n03msg.pdf
BSC080N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 8 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 10.2 100% avalanche tested ID 53 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) ... See More ⇒
Otros transistores... BSC060N10NS3G , BSC060P03NS3EG , BSC067N06LS3G , BSC070N10NS3G , BSC072N03LDG , BSC076N06NS3G , BSC077N12NS3G , BSC079N10NSG , AOD4184A , BSC080N03MSG , BSC080P03LSG , BSC082N10LSG , BSC084P03NS3G , BSC084P03NS3EG , BSC0901NS , BSC0902NS , BSC0908NS .
History: BSC014N04LS
History: BSC014N04LS
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