BSC120N03MSG Todos los transistores

 

BSC120N03MSG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSC120N03MSG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 28 W

Tensión drenaje-fuente (Vds): 30 V

Corriente continua de drenaje (Id): 39 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.012 Ohm

Empaquetado / Estuche: SuperSO8

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BSC120N03MSG Datasheet (PDF)

1.1. bsc120n03ms.pdf Size:485K _update-mosfet

BSC120N03MSG
BSC120N03MSG

BSC120N03MS G OptiMOS™3 M-Series Power-MOSFET Product Summary VDS 30 V Features RDS(on),max VGS=10 V 12 mW • Optimized for 5V driver application (Notebook, VGA, POL) VGS=4.5 V 14 • Low FOMSW for High Frequency SMPS ID 39 A • 100% Avalanche tested PG-TDSON-8 • N-channel • Very low on-resistance R @ V =4.5 V DS(on) GS • Excellent gate charge x R product (FOM)

1.2. bsc120n03ls.pdf Size:481K _update-mosfet

BSC120N03MSG
BSC120N03MSG

BSC120N03LS G OptiMOS™3 Power-MOSFET Product Summary Features VDS 30 V • Fast switching MOSFET for SMPS RDS(on),max 12 mW • Optimized technology for DC/DC converters ID 39 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) • Superi

 1.3. bsc120n03ls rev1.6.pdf Size:686K _infineon

BSC120N03MSG
BSC120N03MSG

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1.4. bsc120n03msg rev1.17.pdf Size:678K _infineon

BSC120N03MSG
BSC120N03MSG

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