APT5019HVR Todos los transistores

Introduzca al menos 3 números o letras

APT5019HVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT5019HVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 250 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 24 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 14 nS

Conductancia de drenaje-sustrato (Cd): 600 pF

Resistencia drenaje-fuente RDS(on): 0.19 Ohm

Empaquetado / Estuche: TO258

Búsqueda de reemplazo de MOSFET APT5019HVR

 

APT5019HVR Datasheet (PDF)

1.1. apt5019hvr.pdf Size:60K _apt

APT5019HVR
APT5019HVR

APT5019HVR 500V 24A 0.190Ω POWER MOS V® TO-258 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

4.1. apt5010jvru3.pdf Size:112K _apt

APT5019HVR
APT5019HVR

APT5010JVRU3 500V 44A 0.100Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® D • Faster Switching • 100% Avalan

4.2. apt5010b2.pdf Size:63K _apt

APT5019HVR
APT5019HVR

APT5010B2FLL APT5010LFLL 500V 46A 0.100W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

4.3. apt5010b2vr.pdf Size:61K _apt

APT5019HVR
APT5019HVR

APT5010B2VR 500V 47A 0.100Ω POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

4.4. apt5014lvr.pdf Size:63K _apt

APT5019HVR
APT5019HVR

APT5014LVR 500V 37A 0.140Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

4.5. apt5016.pdf Size:63K _apt

APT5019HVR
APT5019HVR

APT5016BFLL APT5016SFLL 500V 30A 0.160W TM BLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

4.6. apt5015blc.pdf Size:28K _apt

APT5019HVR
APT5019HVR

APT5015BLC 500V 32A 0.150 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. D • Lower G

4.7. apt5018bll.pdf Size:61K _apt

APT5019HVR
APT5019HVR

APT5018BLL APT5018SLL 500V 27A 0.180W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

4.8. apt5014.pdf Size:61K _apt

APT5019HVR
APT5019HVR

APT5014BLL APT5014SLL 500V 35A 0.140W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

4.9. apt5010jn.pdf Size:60K _apt

APT5019HVR
APT5019HVR

D G APT5010JN 500V 48.0A 0.10Ω S APT5012JN 500V 43.0A 0.12Ω ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 5010JN 5012JN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Cu

4.10. apt5010lvr.pdf Size:64K _apt

APT5019HVR
APT5019HVR

APT5010LVR 500V 47A 0.100Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Faster Switching • 100% Avalanche Tested D • Lower

4.11. apt5010b2vfr.pdf Size:64K _apt

APT5019HVR
APT5019HVR

APT5010B2VFR 500V 47A 0.100Ω POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche

4.12. apt5010jll.pdf Size:60K _apt

APT5019HVR
APT5019HVR

APT5010JLL 500V 44A 0.100 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "

4.13. apt5010jvfr.pdf Size:73K _apt

APT5019HVR
APT5019HVR

APT5010JVFR 500V 44A 0.100Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Fast Recovery Body Diode •

4.14. apt5015.pdf Size:60K _apt

APT5019HVR
APT5019HVR

APT5015BVR 500V 32A 0.150Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

4.15. apt5014bfll.pdf Size:71K _apt

APT5019HVR
APT5019HVR

APT5014BFLL APT5014SFLL 500V 35A 0.140W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

4.16. apt5014b2lc.pdf Size:33K _apt

APT5019HVR
APT5019HVR

APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC TM POWER MOS VI T-MAX™ Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, LLC delivers exceptionally fast

4.17. apt5014b2vr.pdf Size:62K _apt

APT5019HVR
APT5019HVR

APT5014B2VR 500V 37A 0.140Ω POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lo

4.18. apt5014bll.pdf Size:61K _apt

APT5019HVR
APT5019HVR

APT5014BLL APT5014SLL 500V 35A 0.140W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

4.19. apt5010b2lc-47434900.pdf Size:117K _apt

APT5019HVR
APT5019HVR

APT5010B2LC 500V 47A 0.100 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage T-MAX™ N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and C . rss Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. D • L

4.20. apt5010lvfr.pdf Size:66K _apt

APT5019HVR
APT5019HVR

APT5010LVFR 500V 47A 0.100Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tes

4.21. apt5017bvfr.pdf Size:62K _apt

APT5019HVR
APT5019HVR

APT5017BVFR 500V 30A 0.170Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Test

4.22. apt5010b2lc.pdf Size:64K _apt

APT5019HVR
APT5019HVR

APT5010B2LC APT5010LLC 500V 47A 0.100W B2LC TM POWER MOS VI T-MAX™ Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate LLC layout, delivers exceptionally fast

4.23. apt5010b2fll.pdf Size:63K _apt

APT5019HVR
APT5019HVR

APT5010B2FLL APT5010LFLL 500V 46A 0.100W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

4.24. apt5012wvr.pdf Size:61K _apt

APT5019HVR
APT5019HVR

APT5012WVR 500V 40A 0.120Ω POWER MOS V® TO-267 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

4.25. apt5010jvru2.pdf Size:111K _apt

APT5019HVR
APT5019HVR

APT5010JVRU2 500V 44A 0.100Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® D • Faster Switching • 100% Avalan

4.26. apt5010b2ll.pdf Size:68K _apt

APT5019HVR
APT5019HVR

APT5010B2LL APT5010LLL 500V 46A 0.100W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

4.27. apt5018bfll.pdf Size:63K _apt

APT5019HVR
APT5019HVR

APT5018BFLL APT5018SFLL 500V 27A 0.180W TM BLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

4.28. apt5010jfll.pdf Size:63K _apt

APT5019HVR
APT5019HVR

APT5010JFLL 500V 44A 0.100W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with

4.29. apt5012.pdf Size:61K _apt

APT5019HVR
APT5019HVR

APT5012WVR 500V 40A 0.120Ω POWER MOS V® TO-267 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

4.30. apt5017blc.pdf Size:34K _apt

APT5019HVR
APT5019HVR

APT5017BLC APT5017SLC 500V 30A 0.170W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast switc

4.31. apt5010jvr.pdf Size:71K _apt

APT5019HVR
APT5019HVR

APT5010JVR 500V 44A 0.100Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche T

4.32. apt5010jlc.pdf Size:34K _apt

APT5019HVR
APT5019HVR

APT5010JLC 500V 44A 0.100 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast switching speeds. ISOTO

4.33. apt5017.pdf Size:63K _apt

APT5019HVR
APT5019HVR

APT5017SVR 500V 30A 0.170Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower L

4.34. apt5016bfll.pdf Size:63K _apt

APT5019HVR
APT5019HVR

APT5016BFLL APT5016SFLL 500V 30A 0.160W TM BLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

4.35. apt5016bll.pdf Size:61K _apt

APT5019HVR
APT5019HVR

APT5016BLL APT5016SLL 500V 30A 0.160W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

4.36. apt5017bvr.pdf Size:60K _apt

APT5019HVR
APT5019HVR

APT5017BVR 500V 30A 0.170Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

4.37. apt5015bvr.pdf Size:60K _apt

APT5019HVR
APT5019HVR

APT5015BVR 500V 32A 0.150Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

4.38. apt5017svr.pdf Size:63K _apt

APT5019HVR
APT5019HVR

APT5017SVR 500V 30A 0.170Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower L

Otros transistores... APT5010LVR , APT5012WVR , APT5014B2VR , APT5014LVR , APT5015BVR , APT5017BVFR , APT5017BVR , APT5017SVR , J310 , APT5020BN , APT5020BVFR , APT5020BVR , APT5020SVFR , APT5020SVR , APT5022AVR , APT5024AVR , APT5024BVFR .

 


APT5019HVR
  APT5019HVR
  APT5019HVR
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: IRLZ34SPBF | IRLZ34S | IRLZ34PBF | IRLZ34NSPBF | IRLZ34NPBF | IRLZ34NLPBF | IRLZ34L | IRLZ44NSPBF | IRLZ44NPBF | IRLZ44NLPBF | IRLZ44ZSPBF | IRLZ44ZPBF | IRLZ44ZLPBF | IRLZ44SPBF | IRLZ44S |

Introduzca al menos 1 números o letras