BSO200P03SH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BSO200P03S H OptiMOS -P Power-Transistor Product Summary Features V -30 V DS P-Channel R 20 m DS(on),max Enhancement mode I -9.1 A D Logic level 150 C operating temperature PG-DSO-8 Qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking Lead free Halo

BSO200N03S "9@/; %;+877+;B Features V DS Q 2CD CG D49 ?8 ') - . 7@B -'*- m DS(on) max Q ) AD > J65 D649?@=@8I 7@B ?@D63@@

BSO200N03 "9@/; %;+877+;B Features V DS P 1BC BF9C389>7 &( , - 6?A ,&), m DS(on) max P ( @C9=9I54 C538>?B P DSO 8 -85A=135 D>3C9?> B?7 @?9>C -85A=135 D>3C9?> 1=295>C P G35

BSO200N03S www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

BSO200N03 www.VBsemi.tw Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 0.016 at VGS = 10 V 8.5 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.020 at VGS = 4.5 V 7.6 APPLICATIONS Notebook System Power Low Current DC/DC D 1 D 2 SO-8 S