BSO201SPH Todos los transistores

 ..1. Size:314K  infineon
 bso201sph bso201sp h 1.32.pdf

BSO201SP H OptiMOS P-Power-Transistor Product Summary Features V -20 V DS single P-Channel in SO8 R V =4.5 V 8.0 m DS(on),max GS Qualified according JEDEC1) for target applications V =2.5 V 12.9 GS 150 C operating temperature I -14.9 A D Super Logic Level (2.5V rated) Pb-free plating; RoHS compliant PG-DSO-8 Halogen-free according to IEC61249-2-2

 6.1. Size:312K  infineon
 bso201sp.pdf

BSO201SP H OptiMOS P-Power-Transistor Product Summary Features V -20 V DS single P-Channel in SO8 R V =4.5 V 8.0 m DS(on),max GS Qualified according JEDEC1) for target applications V =2.5 V 12.9 GS 150 C operating temperature I -14.9 A D Super Logic Level (2.5V rated) Pb-free plating; RoHS compliant PG-DSO-8 Halogen-free according to IEC61249-2-2

 9.1. Size:315K  infineon
 bso203ph bso203p bso203p h 1.31.pdf

BSO203P H OptiMOS P-Power-Transistor Product Summary Features V -20 V DS dual P-Channel in SO8 R V =4.5 V 21 m DS(on),max GS Qualified according JEDEC for target applications V =2.5 V 34 GS 150 C operating temperature I -8.2 A D Super Logic Level (2.5V rated) Pb-free plating; RoHS compliant, Halogen-free according to IEC61249-2-21 PG-DSO-8 Type Packa

 9.2. Size:316K  infineon
 bso207p bso207p h 13.pdf

BSO207P H OptiMOS P-Power-Transistor Product Summary Features V -20 V DS dual P-Channel in SO8 R V =4.5 V 45.0 m DS(on),max GS Qualified according JEDEC for target applications V =2.5 V 70.0 GS 150 C operating temperature I -5.7 A D Super Logic Level (2.5V rated) Pb-free plating; RoHS compliant PG-DSO-8 Halogen-free according to IEC61249-2-21 Ha

 9.3. Size:653K  infineon
 bso200n03s rev1.7 g.pdf

BSO200N03S "9@/; %;+877+;B Features V DS Q 2CD CG D49 ?8 ') - . 7@B -'*- m DS(on) max Q ) AD > J65 D649?@=@8I 7@B ?@D63@@

 9.4. Size:310K  infineon
 bso204p rev.1.2.pdf

BSO204P TM OptiMOS -P Power-Transistor Product Summary Feature VDS -20 V Dual P-Channel RDS(on) 30 m Enhancement mode ID -7 A Super Logic Level (2.5 V rated) 150 C operating temperature 18 S1 D1 Avalanche rated 27 G1 D1 dv/dt rated 36 S2 D2 45 G2 D2 Top View SIS00070 Type Package BSO204P P-SO 8 Maximum Ratings,at Tj = 25 C, unless otherwise

 9.5. Size:640K  infineon
 bso200n03 v1.4 g.pdf

BSO200N03 "9@/; %;+877+;B Features V DS P 1BC BF9C389>7 &( , - 6?A ,&), m DS(on) max P ( @C9=9I54 C538>?B P DSO 8 -85A=135 D>3C9?> B?7 @?9>C -85A=135 D>3C9?> 1=295>C P G35

 9.6. Size:326K  infineon
 bso200p03sh bso200p03s bso200p03s .pdf

BSO200P03S H OptiMOS -P Power-Transistor Product Summary Features V -30 V DS P-Channel R 20 m DS(on),max Enhancement mode I -9.1 A D Logic level 150 C operating temperature PG-DSO-8 Qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking Lead free Halo

 9.7. Size:297K  infineon
 bso203sph bso203sp bso203sp h 1.31.pdf

BSO203SP H OptiMOS P-Power-Transistor Product Summary Features V -20 V DS single P-Channel in SO8 R V =4.5 V 21 m DS(on),max GS Qualified according JEDEC for target applications V =2.5 V 34 GS 150 C operating temperature I -8.9 A D Super Logic Level (2.5V rated) Pb-free plating; RoHS compliant, Halogen-free according to IEC61249-2-21 PG-DSO-8 Type Pa

 9.8. Size:877K  cn vbsemi
 bso200n03s.pdf

BSO200N03S www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

 9.9. Size:882K  cn vbsemi
 bso200n03.pdf

BSO200N03 www.VBsemi.tw Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 0.016 at VGS = 10 V 8.5 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.020 at VGS = 4.5 V 7.6 APPLICATIONS Notebook System Power Low Current DC/DC D 1 D 2 SO-8 S