BSO203SPH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BSO203SPH
   Código: 203SP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 26 nC
   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 820 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET BSO203SPH

BSO203SPH Datasheet (PDF)

..1. Size:297K infineon
bso203sph bso203sp bso203sp h 1.31.pdf

BSO203SP HOptiMOS P-Power-TransistorProduct SummaryFeaturesV -20 VDS single P-Channel in SO8R V =4.5 V 21mDS(on),max GS Qualified according JEDEC for target applicationsV =2.5 V 34GS 150C operating temperatureI -8.9 AD Super Logic Level (2.5V rated) Pb-free plating; RoHS compliant, Halogen-free according to IEC61249-2-21PG-DSO-8Type Pa

8.1. Size:315K infineon
bso203ph bso203p bso203p h 1.31.pdf

BSO203P HOptiMOS P-Power-TransistorProduct SummaryFeaturesV -20 VDS dual P-Channel in SO8R V =4.5 V 21mDS(on),max GS Qualified according JEDEC for target applicationsV =2.5 V 34GS 150C operating temperatureI -8.2 AD Super Logic Level (2.5V rated) Pb-free plating; RoHS compliant, Halogen-free according to IEC61249-2-21PG-DSO-8Type Packa

9.1. Size:312K infineon
bso201sp.pdf

BSO201SP HOptiMOS P-Power-TransistorProduct SummaryFeaturesV -20 VDS single P-Channel in SO8R V =4.5 V 8.0mDS(on),max GS Qualified according JEDEC1) for target applicationsV =2.5 V 12.9GS 150C operating temperatureI -14.9 AD Super Logic Level (2.5V rated) Pb-free plating; RoHS compliantPG-DSO-8 Halogen-free according to IEC61249-2-2

9.2. Size:316K infineon
bso207p bso207p h 13.pdf

BSO207P HOptiMOS P-Power-TransistorProduct SummaryFeaturesV -20 VDS dual P-Channel in SO8R V =4.5 V 45.0mDS(on),max GS Qualified according JEDEC for target applicationsV =2.5 V 70.0GS 150C operating temperatureI -5.7 AD Super Logic Level (2.5V rated) Pb-free plating; RoHS compliantPG-DSO-8 Halogen-free according to IEC61249-2-21Ha

9.3. Size:653K infineon
bso200n03s rev1.7 g.pdf

BSO200N03S "9@/; %;+877+;BFeatures VDSQ 2CD CG:D49:?8 ') - . 7@B -'*-m DS(on) maxQ ) AD:>:J65 D649?@=@8I 7@B ?@D63@@

9.4. Size:310K infineon
bso204p rev.1.2.pdf

BSO204PTMOptiMOS -P Power-TransistorProduct SummaryFeatureVDS -20 V Dual P-ChannelRDS(on) 30 m Enhancement modeID -7 A Super Logic Level (2.5 V rated) 150C operating temperature18S1 D1 Avalanche rated27G1 D1 dv/dt rated36S2 D245G2 D2Top View SIS00070Type PackageBSO204P P-SO 8Maximum Ratings,at Tj = 25 C, unless otherwise

9.5. Size:640K infineon
bso200n03 v1.4 g.pdf

BSO200N03 "9@/; %;+877+;BFeatures VDSP 1BC BF9C389>7 &( , - 6?A ,&),m DS(on) maxP ( @C9=9I54 C538>?BPDSO8-85A=135 :D>3C9?> B?7 @?9>C-85A=135 :D>3C9?> 1=295>CP G35

9.6. Size:326K infineon
bso200p03sh bso200p03s bso200p03s .pdf

BSO200P03S HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS P-ChannelR 20mDS(on),max Enhancement modeI -9.1 AD Logic level 150C operating temperaturePG-DSO-8 Qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Type Package Marking Lead free Halo

9.7. Size:314K infineon
bso201sph bso201sp h 1.32.pdf

9.8. Size:877K cn vbsemi
bso200n03s.pdf

BSO200N03Swww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

9.9. Size:882K cn vbsemi
bso200n03.pdf

BSO200N03www.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO-8 S

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