BSO204P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSO204P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20.5 nS
Cossⓘ - Capacitancia de salida: 567 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET BSO204P
BSO204P Datasheet (PDF)
bso204p rev.1.2.pdf
BSO204PTMOptiMOS -P Power-TransistorProduct SummaryFeatureVDS -20 V Dual P-ChannelRDS(on) 30 m Enhancement modeID -7 A Super Logic Level (2.5 V rated) 150C operating temperature18S1 D1 Avalanche rated27G1 D1 dv/dt rated36S2 D245G2 D2Top View SIS00070Type PackageBSO204P P-SO 8Maximum Ratings,at Tj = 25 C, unless otherwise
bso203ph bso203p bso203p h 1.31.pdf
BSO203P HOptiMOS P-Power-TransistorProduct SummaryFeaturesV -20 VDS dual P-Channel in SO8R V =4.5 V 21mDS(on),max GS Qualified according JEDEC for target applicationsV =2.5 V 34GS 150C operating temperatureI -8.2 AD Super Logic Level (2.5V rated) Pb-free plating; RoHS compliant, Halogen-free according to IEC61249-2-21PG-DSO-8Type Packa
bso201sp.pdf
BSO201SP HOptiMOS P-Power-TransistorProduct SummaryFeaturesV -20 VDS single P-Channel in SO8R V =4.5 V 8.0mDS(on),max GS Qualified according JEDEC1) for target applicationsV =2.5 V 12.9GS 150C operating temperatureI -14.9 AD Super Logic Level (2.5V rated) Pb-free plating; RoHS compliantPG-DSO-8 Halogen-free according to IEC61249-2-2
bso207p bso207p h 13.pdf
BSO207P HOptiMOS P-Power-TransistorProduct SummaryFeaturesV -20 VDS dual P-Channel in SO8R V =4.5 V 45.0mDS(on),max GS Qualified according JEDEC for target applicationsV =2.5 V 70.0GS 150C operating temperatureI -5.7 AD Super Logic Level (2.5V rated) Pb-free plating; RoHS compliantPG-DSO-8 Halogen-free according to IEC61249-2-21Ha
bso200n03s rev1.7 g.pdf
BSO200N03S "9@/; %;+877+;BFeatures VDSQ 2CD CG:D49:?8 ') - . 7@B -'*-m DS(on) maxQ ) AD:>:J65 D649?@=@8I 7@B ?@D63@@
bso200n03 v1.4 g.pdf
BSO200N03 "9@/; %;+877+;BFeatures VDSP 1BC BF9C389>7 &( , - 6?A ,&),m DS(on) maxP ( @C9=9I54 C538>?BPDSO8-85A=135 :D>3C9?> B?7 @?9>C-85A=135 :D>3C9?> 1=295>CP G35
bso200p03sh bso200p03s bso200p03s .pdf
BSO200P03S HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS P-ChannelR 20mDS(on),max Enhancement modeI -9.1 AD Logic level 150C operating temperaturePG-DSO-8 Qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Type Package Marking Lead free Halo
bso201sph bso201sp h 1.32.pdf
BSO201SP HOptiMOS P-Power-TransistorProduct SummaryFeaturesV -20 VDS single P-Channel in SO8R V =4.5 V 8.0mDS(on),max GS Qualified according JEDEC1) for target applicationsV =2.5 V 12.9GS 150C operating temperatureI -14.9 AD Super Logic Level (2.5V rated) Pb-free plating; RoHS compliantPG-DSO-8 Halogen-free according to IEC61249-2-2
bso203sph bso203sp bso203sp h 1.31.pdf
BSO203SP HOptiMOS P-Power-TransistorProduct SummaryFeaturesV -20 VDS single P-Channel in SO8R V =4.5 V 21mDS(on),max GS Qualified according JEDEC for target applicationsV =2.5 V 34GS 150C operating temperatureI -8.9 AD Super Logic Level (2.5V rated) Pb-free plating; RoHS compliant, Halogen-free according to IEC61249-2-21PG-DSO-8Type Pa
bso200n03s.pdf
BSO200N03Swww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
bso200n03.pdf
BSO200N03www.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO-8 S
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
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