BSO613SPVG Todos los transistores

 ..1. Size:361K  infineon
 bso613spvg.pdf

BSO613SPV G SIPMOS Power-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 0.13 Avalanche rated Continuous drain current ID -3.44 A dv/dt rated 18 S D 27 S D Qualified according to AEC Q101 36 S D 45 G D Top View SIS00062 Type Package Lead free BSO613SPV G PG-SO 8 Yes Maximum Rati

 6.1. Size:93K  infineon
 bso613sp.pdf

Preliminary data BSO613SPV SIPMOS Small-Signal-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 0.13 Avalanche rated Continuous drain current ID -3.44 A dv/dt rated 18 S D 27 S D 36 S D 45 G D Top View SIS00062 Type Package Ordering Code BSO613SPV SO 8 Q67042-S4021 Maximum Ratings,a

 9.1. Size:501K  infineon
 bso615ng.pdf

G Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Marking 615N Rev. 1.2 Page 1 2012-04-04 Rev. 1.2 Page 2 2012-04-04 Rev. 1.2 Page 3 2012-04-04 Rev. 1.2 Page 4 2012-04-04 Rev. 1.2 Page 4 2012-04-04 Rev. 1.2 Page 5 2012-04-04 Rev. 1.4 Page 6 2012-04-04 Rev. 1.2 Page 7 2012-04-04

 9.2. Size:522K  infineon
 bso615n .pdf

G Pb-free lead plating; RoHS compliant Marking 615N Rev. 1.1 Page 1 2007-02-21 Rev. 1.1 Page 2 2007-02-21 Rev. 1.1 Page 3 2007-02-21 Rev. 1.1 Page 4 2007-02-21 Rev. 1.1 Page 4 2007-02-21 Rev. 1.1 Page 5 2007-02-21 Rev. 1.1 Page 6 2007-02-21 Rev. 1.1 Page 7 2007-02-21

 9.3. Size:387K  infineon
 bso612cvg.pdf

Rev. 2.1 BSO 612 CV G SIPMOS Small-Signal-Transistor Product Summary N P Drain source voltage VDS 60 -60 V Features Drain-Source on-state RDS(on) 0.12 0.3 Dual N- and P -Channel resistance Enhancement mode Continuous drain current ID 3 -2 A Avalanche rated Pb-free lead plating;RoHS compliant Type Package Marking BSO 612 CV PG-DSO-8 612CV Maximum Ratings,at Tj = 25 C, unl

 9.4. Size:104K  infineon
 bso615n.pdf

Preliminary Data BSO 615N SIPMOS Small-Signal-Transistor Features Product Summary Drain source voltage 60 V VDS Dual N Channel Drain-Source on-state resistance 0.15 Enhancement mode RDS(on) Continuous drain current 2.6 A ID Avalanche rated Logic Level dv/dt rated Type Package Ordering Code BSO 615N SO 8 Q67041-S2843 Maximum Ratings, at Tj = 25 C, un

 9.5. Size:435K  infineon
 bso615cg.pdf

Rev. 2.1 BSO 615 C G SIPMOS Small-Signal-Transistor Features Product Summary N P Drain source voltage VDS 60 -60 V Dual N- and P -Channel Enhancement mode Drain-Source on-state RDS(on) 0.11 0.3 resistance Logic Level Continuous drain current ID 3.1 -2 A Avalanche rated Pb-free lead plating; RoHS compliant Type Package Marking BSO 615 C PG-DSO-8 615C Maximum Ratings,at Tj =

 9.6. Size:108K  infineon
 bso615nv.pdf

Preliminary Data BSO 615NV SIPMOS Small-Signal-Transistor Product Summary Features Drain source voltage 60 V VDS Dual N Channel Drain-Source on-state resistance 0.12 Enhancement mode RDS(on) Continuous drain current 3.1 A ID Avalanche rated dv/dt rated Type Package Ordering Code BSO 615NV SO 8 Q67041-S2844 Maximum Ratings, at Tj = 25 C, unless otherwise

 9.7. Size:162K  infineon
 bso615c.pdf

Preliminary data BSO 615 C SIPMOS Small-Signal-Transistor Features Product Summary N P Drain source voltage VDS 60 -60 V Dual N- and P -Channel Enhancement mode Drain-Source on-state RDS(on) 0.11 0.3 resistance Logic Level Continuous drain current ID 3.1 -2 A Avalanche rated dv/dt rated Type Package Ordering Code BSO 615 C SO 8 Q67041-S4024 Maximum Ratings,at Tj = 25 C,

 9.8. Size:166K  infineon
 bso612cv.pdf

Preliminary data BSO 612 CV SIPMOS Small-Signal-Transistor Features Product Summary N P Drain source voltage VDS 60 -60 V Dual N- and P -Channel Enhancement mode Drain-Source on-state RDS(on) 0.12 0.3 resistance Avalanche rated Continuous drain current ID 3 -2 A dv/dt rated Type Package Ordering Code BSO 612 CV SO 8 Q67041-S4015 Maximum Ratings,at Tj = 25 C, unless otherwi

 9.9. Size:913K  cn vbsemi
 bso615ng.pdf

BSO615NG www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel