BSO615NG Datasheet. Equivalente

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G Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Marking 615N Rev. 1.2 Page 1 2012-04-04 Rev. 1.2 Page 2 2012-04-04 Rev. 1.2 Page 3 2012-04-04 Rev. 1.2 Page 4 2012-04-04 Rev. 1.2 Page 4 2012-04-04 Rev. 1.2 Page 5 2012-04-04 Rev. 1.4 Page 6 2012-04-04 Rev. 1.2 Page 7 2012-04-04

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BSO615NG www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel

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G Pb-free lead plating; RoHS compliant Marking 615N Rev. 1.1 Page 1 2007-02-21 Rev. 1.1 Page 2 2007-02-21 Rev. 1.1 Page 3 2007-02-21 Rev. 1.1 Page 4 2007-02-21 Rev. 1.1 Page 4 2007-02-21 Rev. 1.1 Page 5 2007-02-21 Rev. 1.1 Page 6 2007-02-21 Rev. 1.1 Page 7 2007-02-21

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Preliminary Data BSO 615N SIPMOS Small-Signal-Transistor Features Product Summary Drain source voltage 60 V VDS Dual N Channel Drain-Source on-state resistance 0.15 Enhancement mode RDS(on) Continuous drain current 2.6 A ID Avalanche rated Logic Level dv/dt rated Type Package Ordering Code BSO 615N SO 8 Q67041-S2843 Maximum Ratings, at Tj = 25 C, un

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 bso615nv.pdf

Preliminary Data BSO 615NV SIPMOS Small-Signal-Transistor Product Summary Features Drain source voltage 60 V VDS Dual N Channel Drain-Source on-state resistance 0.12 Enhancement mode RDS(on) Continuous drain current 3.1 A ID Avalanche rated dv/dt rated Type Package Ordering Code BSO 615NV SO 8 Q67041-S2844 Maximum Ratings, at Tj = 25 C, unless otherwise