BSP171P Todos los transistores

 

BSP171P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSP171P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: SOT223

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BSP171P Datasheet (PDF)

 ..1. Size:92K  infineon
bsp171p.pdf

BSP171P
BSP171P

Preliminary dataBSP 171 PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.3 Avalanche ratedContinuous drain current ID -1.9 A Logic Level4 dv/dt rated321VPS05163Type Package Ordering Code Pin 1 Pin2/4 PIN 3BSP 171 P SOT-223 Q67041-S4019 G D SMaximum

 ..2. Size:581K  infineon
bsp171p .pdf

BSP171P
BSP171P

BSP171PSIPMOS Small-Signal-TransistorProduct SummaryFeaturesV -60 VDS P-ChannelR 0.3DS(on),max Enhancement modeI -1.9 AD Logic level Avalanche rated dv /dt ratedPG-SOT223 Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Type Package Tape and Reel Information Marking PackagingBSP171P PG-SOT223 L6327: 1000 pcs/r

 9.1. Size:140K  siemens
bsp17.pdf

BSP171P
BSP171P

BSP 17SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 17 50 V 3.2 A 0.1 SOT-223 BSP 17Type Ordering Code Tape and Reel InformationBSP 17 Q67000-S220 E6327Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATA =

 9.2. Size:120K  infineon
bsp170p.pdf

BSP171P
BSP171P

Preliminary dataBSP 170 PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-Channel Drain source voltage VDS -60 V Enhancement modeDrain-Source on-state resistance RDS(on) 0.3 Avalanche rated Continuous drain current ID -1.9 A dv/dt rated4321VPS05163Type Package Ordering Code Pin 1 Pin 2/4 PIN 3BSP 170 P SOT-223 Q67041-S4018 G D SMaximu

 9.3. Size:518K  infineon
bsp170p2.pdf

BSP171P
BSP171P

BSP170PSIPMOS Small-Signal-TransistorProduct SummaryFeaturesV -60 VDS P-ChannelR 0.3DS(on),max Enhancement modeI -1.9 AD Avalanche rated dv /dt ratedPG-SOT223 Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Type Package Tape and reel information Marking Lead free PackingBSP170P PG-SOT223 L6327: 1000pcs/reel BSP170

 9.4. Size:859K  cn vbsemi
bsp170p.pdf

BSP171P
BSP171P

BSP170Pwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramete

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