BSP316P Todos los transistores

 

BSP316P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSP316P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.68 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.5 nS
   Cossⓘ - Capacitancia de salida: 27.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
   Paquete / Cubierta: SOT223
     - Selección de transistores por parámetros

 

BSP316P Datasheet (PDF)

 ..1. Size:401K  infineon
bsp316p.pdf pdf_icon

BSP316P

BSP316PSIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS -100 V P-ChannelRDS(on) 1.8 Enhancement modeID -0.68 A Logic LevelPG-SOT223-4-1 dv/dt ratedDrainpin 2/4Gate Qualified according to AEC Q101 pin1 HalogenfreeaccordingtoIE C61249221Sourcepin 3Type Package Tape and Reel Information Marking Packa

 8.1. Size:118K  infineon
bsp316.pdf pdf_icon

BSP316P

BSP 316SIPMOS Small-Signal Transistor P channel Enhancement mode Logic Level VGS(th) = -0.8...-2.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 316 -100 V -0.65 A 2.2 SOT-223 BSP 316Type Ordering Code Tape and Reel InformationBSP 316 Q67000-S92 E6327Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS -100 V

 9.1. Size:49K  philips
bsp31 bsp32 bsp33 3.pdf pdf_icon

BSP316P

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087BSP31; BSP32; BSP33PNP medium power transistors1999 Apr 26Product specificationSupersedes data of 1997 Apr 08Philips Semiconductors Product specificationPNP medium power transistors BSP31; BSP32; BSP33FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2, 4 collectorAP

 9.2. Size:73K  st
bsp30 bsp31 bsp32 bsp33.pdf pdf_icon

BSP316P

BSP30/31BSP32/33MEDIUM POWER AMPLIFIERADVANCE DATA SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTINGCIRCUITS GENERAL PURPOSE MAINLY INTENDED2FOR USE IN MEDIUM POWER INDUSTRIALAPPLICATION AND FOR AUDIO AMPLIFIER3OUTPUT STAGE2 NPN COMPLEMENTS ARE BSP40, BSP41,1BSP42 AND BSP43 RESPECTIVELYSOT-223INTERNAL SCH

Otros transistores... BSO330N02KG , BSO350N03 , BSO613SPVG , BSO615NG , BSP603S2L , BSP170P , BSP171P , BSP315P , IRF3205 , BSP317P , BSP321P , BSP322P , BSP613P , BSP92P , BSR315P , BSR316P , BSR92P .

History: DCCF020M65G2 | SVF7N60CF | IRF7309IPBF | 2SK2199 | WFY3N02 | APT904R2AN | FQPF13N06L

 

 
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