BSS192P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BSS192P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.19 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 13 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 12 Ohm
   Paquete / Cubierta: SOT89

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BSS192P Datasheet (PDF)

..1. Size:359K infineon
bss192p.pdf

BSS 192 PSIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS -250 V P-ChannelRDS(on) 12 Enhancement modeID -0.19 A Logic LevelPG-SOT89 dv/dt rated1Drain2pin 23Gatepin1Source2pin 3VPS05162Type Package Pb-free Tape and Reel Information MarkingPG-SOT89 YesBSS 192 P L6327: 1000 pcs/reel KCMaximum Ratings, at Tj

8.1. Size:64K philips
bss192 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBSS192P-channel enhancement modevertical D-MOS transistor1997 Jun 20Product specificationSupersedes data of July 1993File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement modeBSS192vertical D-MOS transistorFEATURES PINNING - SOT89 Direct interface to C-MOS, TTL, etc.PIN SYMBOL

8.2. Size:63K philips
bss192.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BSS192P-channel enhancement modevertical D-MOS transistorProduct specification 2002 May 22Supersedes data of 1997 Jun 20Philips Semiconductors Product specificationP-channel enhancement modeBSS192vertical D-MOS transistorFEATURES PINNING - SOT89 Direct interface to C-MOS, TTL, etc.PIN SYMBOL DESCRIPTION

8.3. Size:371K nxp
bss192.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

8.4. Size:93K infineon
bss192.pdf

BSS 192SIPMOS Small-Signal Transistor P channel Enhancement mode Logic Level VGS(th) = -0.8...-2.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSS 192 -240 V -0.15 A 20 SOT-89 KBType Ordering Code Tape and Reel InformationBSS 192 Q62702-S634 E6327Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS -240 VVDr

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