BSZ042N04NSG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSZ042N04NSG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.4 nS
Cossⓘ - Capacitancia de salida: 820 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
Paquete / Cubierta: TSDSON8
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BSZ042N04NSG Datasheet (PDF)
bsz042n04nsg.pdf

BSZ042N04NS GProduct Summary 3 Power-TransistorV 40 VDSFeaturesR 4.2mWDS(on),max Fast switching MOSFET for SMPSI 40 AD Optimized technology for DC/DC convertersPG-TSDSON-8 Qualified according to JEDEC1) for target applications N-channel; Normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
bsz042n06ns.pdf

TypeBSZ042N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 4.2 mW Superior thermal resistanceID 40 A N-channelQOSS nC 32 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 27 Pb-free lead plating; RoHS compliantTSDSON
bsz040n04lsg.pdf

BSZ040N04LS GOptiMOS3 Power-TransistorProduct SummaryFeatures V 40 VDS Fast switching MOSFET for SMPS R 4.0mDS(on),max Optimized technology for DC/DC converters I 40 ADPG-TSDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) S
bsz040n06ls5.pdf

BSZ040N06LS5MOSFETTSDSON-8 FLOptiMOSTM Power-Transistor, 60 V(enlarged source interconnection)Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Tab
Otros transistores... BSS83P , BSS84P , BSS84PW , BSV236SP , BSZ019N03LS , BSZ035N03LSG , BSZ035N03MSG , BSZ040N04LSG , STP75NF75 , BSZ050N03LSG , BSZ050N03MSG , BSZ058N03LSG , BSZ058N03MSG , BSZ067N06LS3G , BSZ076N06NS3G , BSZ086P03NS3G , BSZ086P03NS3EG .
History: 18N10 | AO4882 | AP2426GEY-HF | SSM4409GEM | AP3P6R0S | IPW50R350CP | 68P40
History: 18N10 | AO4882 | AP2426GEY-HF | SSM4409GEM | AP3P6R0S | IPW50R350CP | 68P40



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