BSZ076N06NS3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BSZ076N06NS3G Datasheet (PDF)

2.1. Size:243K infineon
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TypeBSZ076N06NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 60 VDS Ideal for high frequency switching and sync. rec.R 7.6mDS(on),max Optimized technology for DC/DC convertersI 20 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; R

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MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VBSZ075N08NS5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VBSZ075N08NS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC conv

9.2. Size:1428K infineon
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BSZ070N08LS5MOSFETTSDSON-8 FLOptiMOS5 Power-Transistor, 80 V(enlarged source interconnection)Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS complian

9.3. Size:1446K infineon
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BSZ0703LSMOSFETTSDSON-8 FLOptiMOSTM Power-Transistor, 60 V(enlarged source interconnection)Features Optimized for chargers 100% avalanche tested Superior thermal resistance N-channel, Logic level Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified for Standard Grade applications Ideal for high-frequency switchi

Otros transistores... BSZ035N03MSG , BSZ040N04LSG , BSZ042N04NSG , BSZ050N03LSG , BSZ050N03MSG , BSZ058N03LSG , BSZ058N03MSG , BSZ067N06LS3G , 12N60 , BSZ086P03NS3G , BSZ086P03NS3EG , BSZ088N03LSG , BSZ088N03MSG , BSZ0909NS , BSZ097N04LSG , BSZ100N03LSG , BSZ100N03MSG .