BSZ076N06NS3G Todos los transistores

 

BSZ076N06NS3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSZ076N06NS3G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 660 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0076 Ohm

Encapsulados: TSDSON8

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BSZ076N06NS3G datasheet

 2.1. Size:243K  infineon
bsz076n06ns3.pdf pdf_icon

BSZ076N06NS3G

Type BSZ076N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V 60 V DS Ideal for high frequency switching and sync. rec. R 7.6 m DS(on),max Optimized technology for DC/DC converters I 20 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; R

 9.1. Size:1358K  infineon
bsz075n08ns5.pdf pdf_icon

BSZ076N06NS3G

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V BSZ075N08NS5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V BSZ075N08NS5 TSDSON-8 FL 1 Description (enlarged source interconnection) Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC conv

 9.2. Size:1428K  infineon
bsz070n08ls5.pdf pdf_icon

BSZ076N06NS3G

BSZ070N08LS5 MOSFET TSDSON-8 FL OptiMOS 5 Power-Transistor, 80 V (enlarged source interconnection) Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS complian

 9.3. Size:1446K  infineon
bsz0703ls.pdf pdf_icon

BSZ076N06NS3G

BSZ0703LS MOSFET TSDSON-8 FL OptiMOSTM Power-Transistor, 60 V (enlarged source interconnection) Features Optimized for chargers 100% avalanche tested Superior thermal resistance N-channel, Logic level Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified for Standard Grade applications Ideal for high-frequency switchi

Otros transistores... BSZ035N03MSG , BSZ040N04LSG , BSZ042N04NSG , BSZ050N03LSG , BSZ050N03MSG , BSZ058N03LSG , BSZ058N03MSG , BSZ067N06LS3G , STP75NF75 , BSZ086P03NS3G , BSZ086P03NS3EG , BSZ088N03LSG , BSZ088N03MSG , BSZ0909NS , BSZ097N04LSG , BSZ100N03LSG , BSZ100N03MSG .

 

 

 


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