APT5024AVR Todos los transistores

 ..1. Size:60K  apt
 apt5024avr.pdf

APT5024AVR 500V 18.5A 0.240 POWER MOS V TO-3 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 7.1. Size:71K  apt
 apt5024bfll.pdf

APT5024BFLL APT5024SFLL 500V 22A 0.240W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

 7.2. Size:170K  apt
 apt5024bll apt5024sll.pdf

APT5024BLL APT5024SLL 500V 22A 0.240 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL along

 7.3. Size:32K  apt
 apt5024svr.pdf

APT5024SVR 500V 22A 0.240 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower Leak

 7.4. Size:59K  apt
 apt5024bvr.pdf

APT5024BVR 500V 22A 0.240 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 7.5. Size:113K  apt
 apt5024svfrg.pdf

APT5024BVFR APT5024SVFR 500V 22A 0.240 BVFR FREDFET POWER MOS V D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVFR also achieves faster switching speeds through optimized gate layout.

 7.6. Size:162K  apt
 apt5024bllg.pdf

APT5024BLL APT5024SLL 500V 22A 0.240 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL along

 7.7. Size:61K  apt
 apt5024bvfr.pdf

APT5024BVFR 500V 22A 0.240 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 7.8. Size:216K  microsemi
 apt5024sfll apt5024sfllg.pdf

APT5024BFLL APT5024SFLL 500V 22A 0.240 BFLL R POWER MOS 7 FREDFET (B) Power MOS 7 is a new generation of low loss, high voltage, N-Channel D3PAK enhancement mode power MOSFETS. Both conduction and switch- (S) ing losses are addressed with Power MOS 7 by significantly lowering C G E RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along wi

 7.9. Size:375K  inchange semiconductor
 apt5024bfll.pdf

isc N-Channel MOSFET Transistor APT5024BFLL FEATURES Drain Current I =22A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.24 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 7.10. Size:375K  inchange semiconductor
 apt5024bvr.pdf

isc N-Channel MOSFET Transistor APT5024BVR FEATURES Drain Current I =22A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.24 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.11. Size:375K  inchange semiconductor
 apt5024bll.pdf

isc N-Channel MOSFET Transistor APT5024BLL FEATURES Drain Current I =22A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.24 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.12. Size:375K  inchange semiconductor
 apt5024bvfr.pdf

isc N-Channel MOSFET Transistor APT5024BVFR FEATURES Drain Current I =22A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.24 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp